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Ganagona, Naveengoud, Raeissi, Bahman, Vines, Lasse, Monakhov, Edouard V., Svensson, Bengt G. (2012) Defects in p-type Cz-silicon irradiated at elevated temperatures. physica status solidi (c), 9 (10). 2009-2012 doi:10.1002/pssc.201200217

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Reference TypeJournal (article/letter/editorial)
TitleDefects in p-type Cz-silicon irradiated at elevated temperatures
Journalphysica status solidi (c)
AuthorsGanagona, NaveengoudAuthor
Raeissi, BahmanAuthor
Vines, LasseAuthor
Monakhov, Edouard V.Author
Svensson, Bengt G.Author
Year2012 (October)Volume9
Issue10
PublisherWiley
DOIdoi:10.1002/pssc.201200217Search in ResearchGate
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Mindat Ref. ID5122068Long-form Identifiermindat:1:5:5122068:2
GUID0
Full ReferenceGanagona, Naveengoud, Raeissi, Bahman, Vines, Lasse, Monakhov, Edouard V., Svensson, Bengt G. (2012) Defects in p-type Cz-silicon irradiated at elevated temperatures. physica status solidi (c), 9 (10). 2009-2012 doi:10.1002/pssc.201200217
Plain TextGanagona, Naveengoud, Raeissi, Bahman, Vines, Lasse, Monakhov, Edouard V., Svensson, Bengt G. (2012) Defects in p-type Cz-silicon irradiated at elevated temperatures. physica status solidi (c), 9 (10). 2009-2012 doi:10.1002/pssc.201200217
In(2012, October) physica status solidi (c) Vol. 9 (10) Wiley

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Tang, C. K., Vines, L., Svensson, B. G., Monakhov, E. V. (2012) Deep level transient spectroscopy on proton-irradiated Fe-contaminated p-type silicon. physica status solidi (c), 9 (10). 1992-1995 doi:10.1002/pssc.201200163
Malmbekk, H., Vines, L., Monakhov, E. V., Svensson, B. G. (2011) Hydrogen-related defects in boron doped p-type silicon. physica status solidi (c), 8 (3). 705-708 doi:10.1002/pssc.201000260
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Ganagona, N, Raeissi, B, Vines, L, Monakhov, E V, Svensson, B G (2012) Formation of donor and acceptor states of the divacancy–oxygen centre in p-type Cz-silicon. Journal of Physics: Condensed Matter, 24 (43). 435801pp. doi:10.1088/0953-8984/24/43/435801
Normann, Hans B., Svensson, Bengt G., Monakhov, Edouard (2012) Formation of shallow front emitters for solar cells by rapid thermal processing. physica status solidi (c), 9 (10). 2138-2140 doi:10.1002/pssc.201200202
Monakhov, Eduard, Vines, Lasse, Johansen, Klaus Magnus, Kuznetsov, Andrej (2019) Bengt Gunnar Svensson 12.09.1953–24.07.2018. physica status solidi (a), 216 (10). 1900203pp. doi:10.1002/pssa.201900203
Kolevatov, Ilia L., Weiser, Philip M., Monakhov, Eduard V., Svensson, Bengt G. (2019) Interaction Between Hydrogen and Vacancy Defects in Crystalline Silicon. physica status solidi (a), 216 (10). 1800670pp. doi:10.1002/pssa.201800670
Ayedh, Hussein M., Grigorev, Aleksei A., Galeckas, Augustinas, Svensson, Bengt G., Monakhov, Edouard V. (2019) Annealing Kinetics of the Interstitial Carbon–Dioxygen Complex in Silicon. physica status solidi (a), 216 (14). 1800986pp. doi:10.1002/pssa.201800986
Quemener, V., Raeissi, B., Herklotz, F., Murin, L. I., Monakhov, E. V., Svensson, B. G. (2014) Kinetics study of vacancy-oxygen-related defects in monocrystalline solar silicon. physica status solidi (b), 251 (11). 2197-2200 doi:10.1002/pssb.201400155
Svensson, B. G., Monakhov, E.V., Alfieri, G., Mikelsen, M., Avset, B. S., Hallén, A. (2004) Defects and diffusion in high purity silicon for detector applications. physica status solidi (c), 1 (9). 2250-2257 doi:10.1002/pssc.200404847
Bhoodoo, Chidanand, Vines, Lasse, Monakhov, Edouard, Gunnar Svensson, Bengt (2017) Diffusivity of the double negatively charged mono-vacancy in silicon. Journal of Physics: Condensed Matter, 29 (20). 205501pp. doi:10.1088/1361-648x/aa693f
 
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