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Gogneau, N., Jalabert, D., Monroy, E., Sarigiannidou, E., Rouvière, J. L., Shibata, T., Tanaka, M., Gerard, J. M., Daudin, B. (2004) Influence of AlN overgrowth on structural properties of GaN quantum wells and quantum dots grown by plasma-assisted molecular beam epitaxy. Journal of Applied Physics, 96 (2). 1104-1110 doi:10.1063/1.1759785

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Reference TypeJournal (article/letter/editorial)
TitleInfluence of AlN overgrowth on structural properties of GaN quantum wells and quantum dots grown by plasma-assisted molecular beam epitaxy
JournalJournal of Applied Physics
AuthorsGogneau, N.Author
Jalabert, D.Author
Monroy, E.Author
Sarigiannidou, E.Author
Rouvière, J. L.Author
Shibata, T.Author
Tanaka, M.Author
Gerard, J. M.Author
Daudin, B.Author
Year2004 (July 15)Volume96
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.1759785Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5128385Long-form Identifiermindat:1:5:5128385:8
GUID0
Full ReferenceGogneau, N., Jalabert, D., Monroy, E., Sarigiannidou, E., Rouvière, J. L., Shibata, T., Tanaka, M., Gerard, J. M., Daudin, B. (2004) Influence of AlN overgrowth on structural properties of GaN quantum wells and quantum dots grown by plasma-assisted molecular beam epitaxy. Journal of Applied Physics, 96 (2). 1104-1110 doi:10.1063/1.1759785
Plain TextGogneau, N., Jalabert, D., Monroy, E., Sarigiannidou, E., Rouvière, J. L., Shibata, T., Tanaka, M., Gerard, J. M., Daudin, B. (2004) Influence of AlN overgrowth on structural properties of GaN quantum wells and quantum dots grown by plasma-assisted molecular beam epitaxy. Journal of Applied Physics, 96 (2). 1104-1110 doi:10.1063/1.1759785
In(2004, July) Journal of Applied Physics Vol. 96 (2) AIP Publishing

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Gogneau, N., Jalabert, D., Monroy, E., Shibata, T., Tanaka, M., Daudin, B. (2003) Structure of GaN quantum dots grown under “modified Stranski–Krastanow” conditions on AlN. Journal of Applied Physics, 94 (4). 2254-2261 doi:10.1063/1.1592866
Adelmann, C., Sarigiannidou, E., Jalabert, D., Hori, Y., Rouvière, J.-L., Daudin, B., Fanget, S., Bru-Chevallier, C., Shibata, T., Tanaka, M. (2003) Growth and optical properties of GaN/AlN quantum wells. Applied Physics Letters, 82 (23). 4154-4156 doi:10.1063/1.1581386
Monroy, E., Sarigiannidou, E., Fossard, F., Gogneau, N., Bellet-Amalric, E., Rouvière, J.-L., Monnoye, S., Mank, H., Daudin, B. (2004) Growth kinetics of N-face polarity GaN by plasma-assisted molecular-beam epitaxy. Applied Physics Letters, 84 (18). 3684-3686 doi:10.1063/1.1739511
Gogneau, N., Sarigiannidou, E., Monroy, E., Monnoye, S., Mank, H., Daudin, B. (2004) Surfactant effect of gallium during the growth of GaN on AlN(0001¯) by plasma-assisted molecular beam epitaxy. Applied Physics Letters, 85 (8). 1421-1423 doi:10.1063/1.1782264
Sarigiannidou, E., Monroy, E., Daudin, B., Rouvière, J. L., Andreev, A. D. (2005) Strain distribution in GaN∕AlN quantum-dot superlattices. Applied Physics Letters, 87 (20). 203112pp. doi:10.1063/1.2123394
Brault, J., Tanaka, S., Sarigiannidou, E., Rouvière, J.-L., Daudin, B., Feuillet, G., Nakagawa, H. (2003) Linear alignment of GaN quantum dots on AlN grown on vicinal SiC substrates. Journal of Applied Physics, 93 (5). 3108-3110 doi:10.1063/1.1538334
Monroy, E., Daudin, B., Bellet-Amalric, E., Gogneau, N., Jalabert, D., Enjalbert, F., Brault, J., Barjon, J., Dang, Le Si (2003) Surfactant effect of In for AlGaN growth by plasma-assisted molecular beam epitaxy. Journal of Applied Physics, 93 (3). 1550-1556 doi:10.1063/1.1535734
Hori, Y., Jalabert, D., Andreev, T., Monroy, E., Tanaka, M., Oda, O., Daudin, B. (2004) Morphological properties of GaN quantum dots doped with Eu. Applied Physics Letters, 84 (13). 2247-2249 doi:10.1063/1.1690467
Helman, A., Tchernycheva, M., Lusson, A., Warde, E., Julien, F. H., Moumanis, Kh., Fishman, G., Monroy, E., Daudin, B., Le Si Dang, D., Bellet-Amalric, E., Jalabert, D. (2003) Intersubband spectroscopy of doped and undoped GaN/AlN quantum wells grown by molecular-beam epitaxy. Applied Physics Letters, 83 (25). 5196-5198 doi:10.1063/1.1635985
Gogneau, N., Fossard, F., Monroy, E., Monnoye, S., Mank, H., Daudin, B. (2004) Effects of stacking on the structural and optical properties of self-organized GaN/AlN quantum dots. Applied Physics Letters, 84 (21). 4224-4226 doi:10.1063/1.1755840
Gogneau, N., Enjalbert, F., Fossard, F., Hori, Y., Adelmann, C., Brault, J., Martinez-Guerrero, E., Simon, J., Bellet-Amalric, E., Jalabert, D., Pelekanos, N., Rouvière, J.-L., Daudin, B., Si Dang, Le, Mariette, H., Monroy, E. (2004) Recent progress in growth and physics of GaN/AlN quantum dots. physica status solidi (c), 1 (6). 1445-1450 doi:10.1002/pssc.200304083
 
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