Vote for your favorite mineral in #MinCup25! - Zunyite vs. Molybdenite
It's the visually-unmistakable #zunyite vs the physically funky #molybdenite.
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Kakanakova-Georgieva, A., Persson, P. O. Å, Kasic, A., Hultman, L., Janzén, E. (2006) Superior material properties of AlN on vicinal 4H-SiC. Journal of Applied Physics, 100 (3). 36105pp. doi:10.1063/1.2219380

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleSuperior material properties of AlN on vicinal 4H-SiC
JournalJournal of Applied Physics
AuthorsKakanakova-Georgieva, A.Author
Persson, P. O. ÅAuthor
Kasic, A.Author
Hultman, L.Author
Janzén, E.Author
Year2006 (August)Volume100
Issue3
PublisherAIP Publishing
DOIdoi:10.1063/1.2219380Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5143003Long-form Identifiermindat:1:5:5143003:0
GUID0
Full ReferenceKakanakova-Georgieva, A., Persson, P. O. Å, Kasic, A., Hultman, L., Janzén, E. (2006) Superior material properties of AlN on vicinal 4H-SiC. Journal of Applied Physics, 100 (3). 36105pp. doi:10.1063/1.2219380
Plain TextKakanakova-Georgieva, A., Persson, P. O. Å, Kasic, A., Hultman, L., Janzén, E. (2006) Superior material properties of AlN on vicinal 4H-SiC. Journal of Applied Physics, 100 (3). 36105pp. doi:10.1063/1.2219380
In(2006, August) Journal of Applied Physics Vol. 100 (3) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Pozina, G., Hemmingsson, C., Forsberg, U., Lundskog, A., Kakanakova-Georgieva, A., Monemar, B., Hultman, L., Janzén, E. (2008) Time-resolved photoluminescence properties of AlGaN/AlN/GaN high electron mobility transistor structures grown on 4H-SiC substrate. Journal of Applied Physics, 104 (11). 113513pp. doi:10.1063/1.3028687
Kakanakova-Georgieva, A., Persson, P.O.Å., Yakimova, R., Hultman, L., Janzén, E. (2004) Sublimation epitaxy of AlN on SiC: growth morphology and structural features. Journal of Crystal Growth, 273 (1). 161-166 doi:10.1016/j.jcrysgro.2004.07.093
Persson, P. O. Å., Hultman, L., Janson, M. S., Hallén, A. (2006) Ostwald ripening of interstitial-type dislocation loops in 4H-silicon carbide. Journal of Applied Physics, 100 (5). 53521pp. doi:10.1063/1.2338142
Persson, P. O. Å., Hultman, L., Jacobson, H., Bergman, J. P., Janzén, E., Molina-Aldareguia, J. M., Clegg, W. J., Tuomi, T. (2002) Structural defects in electrically degraded 4H-SiC p+/n−/n+ diodes. Applied Physics Letters, 80 (25). 4852-4854 doi:10.1063/1.1487904
Valcheva, E., Birch, J., Persson, P. O. Å., Tungasmita, S., Hultman, L. (2006) Epitaxial growth and orientation of AlN thin films on Si(001) substrates deposited by reactive magnetron sputtering. Journal of Applied Physics, 100 (12). 123514pp. doi:10.1063/1.2402971
Persson, P. O. Å., Hultman, L., Janson, M. S., Hallén, A., Yakimova, R. (2003) Dislocation loop evolution in ion implanted 4H–SiC. Journal of Applied Physics, 93 (11). 9395-9397 doi:10.1063/1.1569027
Kakanakova-Georgieva, A., Yakimova, R., Linnarsson, M. K., Janzén, E. (2002) Site-occupying behavior of boron in compensated p-type 4H–SiC grown by sublimation epitaxy. Journal of Applied Physics, 91 (5). 3471-3473 doi:10.1063/1.1433931
Nilsson, D, Janzén, E, Kakanakova-Georgieva, A (2016) Lattice parameters of AlN bulk, homoepitaxial and heteroepitaxial material. Journal of Physics D: Applied Physics, 49. 175108pp. doi:10.1088/0022-3727/49/17/175108
Hallin, C., Kakanakova-Georgieva, A., Persson, P., Janzén, E. (2005) High quality 6H-SiC (0001) homoepitaxial layers as substrate surface for growth of AlN epitaxial layers. physica status solidi (c), 2 (7). 2109-2112 doi:10.1002/pssc.200461615
Kakanakova-Georgieva, A., Gueorguiev, G. K., Yakimova, R., Janzén, E. (2004) Effect of impurity incorporation on crystallization in AlN sublimation epitaxy. Journal of Applied Physics, 96 (9). 5293-5297 doi:10.1063/1.1785840
Palisaitis, J., Lundskog, A., Forsberg, U., Janzén, E., Birch, J., Hultman, L., Persson, P. O. Å. (2014) Characterization of InGaN/GaN quantum well growth using monochromated valence electron energy loss spectroscopy. Journal of Applied Physics, 115 (3). 34302pp. doi:10.1063/1.4861179
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: September 12, 2025 18:28:25
Go to top of page