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Michon, A., Sagnes, I., Patriarche, G., Beaudoin, G., Mérat-Combes, M. N., Saint-Girons, G. (2006) Effect of cap-layer growth rate on morphology and luminescence of InAs∕InP(001) quantum dots grown by metal-organic vapor phase epitaxy. Journal of Applied Physics, 100 (3). 33508pp. doi:10.1063/1.2227709

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Reference TypeJournal (article/letter/editorial)
TitleEffect of cap-layer growth rate on morphology and luminescence of InAs∕InP(001) quantum dots grown by metal-organic vapor phase epitaxy
JournalJournal of Applied Physics
AuthorsMichon, A.Author
Sagnes, I.Author
Patriarche, G.Author
Beaudoin, G.Author
Mérat-Combes, M. N.Author
Saint-Girons, G.Author
Year2006 (August)Volume100
Issue3
PublisherAIP Publishing
DOIdoi:10.1063/1.2227709Search in ResearchGate
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Mindat Ref. ID5143145Long-form Identifiermindat:1:5:5143145:5
GUID0
Full ReferenceMichon, A., Sagnes, I., Patriarche, G., Beaudoin, G., Mérat-Combes, M. N., Saint-Girons, G. (2006) Effect of cap-layer growth rate on morphology and luminescence of InAs∕InP(001) quantum dots grown by metal-organic vapor phase epitaxy. Journal of Applied Physics, 100 (3). 33508pp. doi:10.1063/1.2227709
Plain TextMichon, A., Sagnes, I., Patriarche, G., Beaudoin, G., Mérat-Combes, M. N., Saint-Girons, G. (2006) Effect of cap-layer growth rate on morphology and luminescence of InAs∕InP(001) quantum dots grown by metal-organic vapor phase epitaxy. Journal of Applied Physics, 100 (3). 33508pp. doi:10.1063/1.2227709
In(2006, August) Journal of Applied Physics Vol. 100 (3) AIP Publishing

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Michon, A., Patriarche, G., Beaudoin, G., Saint-Girons, G., Gogneau, N., Sagnes, I. (2007) Density of InAs∕InP(001) quantum dots grown by metal-organic vapor phase epitaxy: Independent effects of InAs and cap-layer growth rates. Applied Physics Letters, 91 (10). 102107pp. doi:10.1063/1.2779101
Michon, A., Saint-Girons, G., Beaudoin, G., Sagnes, I., Largeau, L., Patriarche, G. (2005) InAs∕InP(001) quantum dots emitting at 1.55μm grown by low-pressure metalorganic vapor-phase epitaxy. Applied Physics Letters, 87 (25). 253114pp. doi:10.1063/1.2150271
Michon, A., Sagnes, I., Patriarche, G., Beaudoin, G., Mérat-Combes, M. N., Saint-Girons, G. (2006) Thermodynamical analysis of the shape and size dispersion ofInAs∕InP(001)quantum dots. Physical Review B, 73 (16) doi:10.1103/physrevb.73.165321
Saint-Girons, G., Michon, A., Sagnes, I., Beaudoin, G., Patriarche, G. (2007) Thermodynamic analysis of the shape, anisotropy and formation process of InAs/InP(001) quantum dots and quantum sticks grown by metalorganic vapor phase epitaxy. Surface Science, 601 (13). 2765-2768 doi:10.1016/j.susc.2006.12.040
Michon, A., Patriarche, G., Sagnes, I., Beaudoin, G., Saint-Girons, G. (2006) InAs/InP(001) quantum dots and quantum sticks grown by MOVPE: shape, anisotropy and formation process. physica status solidi (c), 3 (11). 3928-3931 doi:10.1002/pssc.200671539
Saint-Girons, G., Patriarche, G., Michon, A., Beaudoin, G., Sagnes, I., Smaali, K., Troyon, M. (2006) Initial stage of the overgrowth of InP on InAs∕InP(001) quantum dots: Formation of InP terraces driven by preferential nucleation on quantum dot edges. Applied Physics Letters, 89 (3). 31923pp. doi:10.1063/1.2233554
Benoit, J. M., Le Gratiet, L., Beaudoin, G., Michon, A., Saint-Girons, G., Kuszelewicz, R., Sagnes, I. (2006) Nanoepitaxy of InAs∕InP quantum dots by metalorganic vapor phase epitaxy for 1.55μm emitters. Applied Physics Letters, 88 (4). 41113pp. doi:10.1063/1.2167804
Saint-Girons, G., Michon, A., Sagnes, I., Beaudoin, G., Patriarche, G. (2006) Thermodynamic description of the competition between quantum dots and quantum dashes during metalorganic vapor phase epitaxy in theInAs∕InP(001)system: Experiment and theory. Physical Review B, 74 (24) doi:10.1103/physrevb.74.245305
Saint-Girons, G., Chauvin, N., Michon, A., Patriarche, G., Beaudoin, G., Brémond, G., Bru-Chevallier, C., Sagnes, I. (2006) Microphotoluminescence of exciton and biexciton around 1.5μm from a single InAs∕InP(001) quantum dot. Applied Physics Letters, 88 (13). 133101pp. doi:10.1063/1.2185008
Michon, A., Hostein, R., Patriarche, G., Gogneau, N., Beaudoin, G., Beveratos, A., Robert-Philip, I., Laurent, S., Sauvage, S., Boucaud, P., Sagnes, I. (2008) Metal organic vapor phase epitaxy of InAsP/InP(001) quantum dots for 1.55μm applications: Growth, structural, and optical properties. Journal of Applied Physics, 104 (4). 43504pp. doi:10.1063/1.2968338
Saint-Girons, G., Patriarche, G., Mereuta, A., Sagnes, I. (2002) Origin of the bimodal distribution of low-pressure metal-organic-vapor-phase-epitaxy grown InGaAs/GaAs quantum dots. Journal of Applied Physics, 91 (6). 3859-3863 doi:10.1063/1.1448887
 
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