Vote for your favorite mineral in #MinCup25! - Silver vs. Baryte
Are you ready for beautiful utility as sparkling silver competes against hefty baryte?
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Grivickas, P., Grivickas, V., Linnros, J., Galeckas, A. (2007) Fundamental band edge absorption in nominally undoped and doped 4H‐SiC. Journal of Applied Physics, 101 (12). 123521pp. doi:10.1063/1.2749335

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleFundamental band edge absorption in nominally undoped and doped 4H‐SiC
JournalJournal of Applied Physics
AuthorsGrivickas, P.Author
Grivickas, V.Author
Linnros, J.Author
Galeckas, A.Author
Year2007 (June 15)Volume101
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.2749335Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5146178Long-form Identifiermindat:1:5:5146178:4
GUID0
Full ReferenceGrivickas, P., Grivickas, V., Linnros, J., Galeckas, A. (2007) Fundamental band edge absorption in nominally undoped and doped 4H‐SiC. Journal of Applied Physics, 101 (12). 123521pp. doi:10.1063/1.2749335
Plain TextGrivickas, P., Grivickas, V., Linnros, J., Galeckas, A. (2007) Fundamental band edge absorption in nominally undoped and doped 4H‐SiC. Journal of Applied Physics, 101 (12). 123521pp. doi:10.1063/1.2749335
In(2007, June) Journal of Applied Physics Vol. 101 (12) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Galeckas, A., Grivickas, V., Linnros, J., Bleichner, H., Hallin, C. (1997) Free carrier absorption and lifetime mapping in 4H SiC epilayers. Journal of Applied Physics, 81 (8). 3522-3525 doi:10.1063/1.365050
Grivickas, Paulius, Grivickas, Vytautas, Galeckas, Augustinas, Linnros, Jan (2002) Characterization of 4H-SiC Band-Edge Absorption Properties by Free-Carrier Absorption Technique with a Variable Excitation Spectrum. Materials Science Forum, 389. 617-620 doi:10.4028/www.scientific.net/msf.389-393.617
Galeckas, A., Linnros, J., Grivickas, V., Lindefelt, U., Hallin, C. (1997) Auger recombination in 4H-SiC: Unusual temperature behavior. Applied Physics Letters, 71 (22). 3269-3271 doi:10.1063/1.120309
Galeckas, A., Linnros, J., Frischholz, M., Grivickas, V. (2001) Optical characterization of excess carrier lifetime and surface recombination in 4H/6H–SiC. Applied Physics Letters, 79 (3). 365-367 doi:10.1063/1.1385588
Grivickas, Vytautas, Gulbinas, K., Grivickas, Paulius, Manolis, Georgios, Linnros, Jan (2010) Fundamental Band Edge Absorption in 3C-SiC: Phonon Absorption Assisted Transitions. Materials Science Forum, 645. 231-234 doi:10.4028/www.scientific.net/msf.645-648.231
Grivickas, Vytautas, Galeckas, Augustinas, Grivickas, Paulius, Linnros, Jan (2000) Determination of the Polarization Dependence of the Free-Carrier-Absorption in 4H-SiC at High-Level Photoinjection. Materials Science Forum, 338. 555-558 doi:10.4028/www.scientific.net/msf.338-342.555
Galeckas, A., Grivickas, P., Grivickas, V., Bikbajevas, V., Linnros, J. (2002) Temperature Dependence of the Absorption Coefficient in 4H- and 6H-Silicon Carbide at 355 nm Laser Pumping Wavelength. physica status solidi (a), 191 (2). 613-620 doi:10.1002/1521-396x(200206)191:2<613::aid-pssa613>3.0.co;2-t
Grivickas, Vytautas, Grivickas, Paulius, Linnros, Jan, Galeckas, Augustinas (2004) Two-Photon Spectroscopy of 4H-SiC by Using Laser Pulses at Below-Gap Frequencies. Materials Science Forum, 457. 605-608 doi:10.4028/www.scientific.net/msf.457-460.605
Grivickas, Paulius, Linnros, Jan, Grivickas, Vytautas (2001) Carrier diffusion characterization in epitaxial 4H–SiC. Journal of Materials Research, 16 (2) 524-528 doi:10.1557/jmr.2001.0075
Grivickas, Vytautas, Linnros, Jan, Galeckas, Augustinas (1998) Depth- and Time-Resolved Free Carrier Absorption in 4H SiC Epilayers: A Study of Carrier Recombination and Transport Parameters. Materials Science Forum, 264. 529-532 doi:10.4028/www.scientific.net/msf.264-268.529
Grivickas, P., Redeckas, K., Gulbinas, K., Conway, A. M., Voss, L. F., Bora, M., Sampayan, S., Vengris, M., Grivickas, V. (2019) Intrinsic shape of free carrier absorption spectra in 4H-SiC. Journal of Applied Physics, 125 (22). 225701pp. doi:10.1063/1.5095161
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: September 5, 2025 16:47:37
Go to top of page