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Zocchi, Fabio E. (2007) Generation-recombination and thermal noise coupling in the drift-diffusion model. Journal of Applied Physics, 102 (10). 103712pp. doi:10.1063/1.2811847

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Reference TypeJournal (article/letter/editorial)
TitleGeneration-recombination and thermal noise coupling in the drift-diffusion model
JournalJournal of Applied Physics
AuthorsZocchi, Fabio E.Author
Year2007 (November 15)Volume102
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.2811847Search in ResearchGate
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Mindat Ref. ID5149695Long-form Identifiermindat:1:5:5149695:7
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Full ReferenceZocchi, Fabio E. (2007) Generation-recombination and thermal noise coupling in the drift-diffusion model. Journal of Applied Physics, 102 (10). 103712pp. doi:10.1063/1.2811847
Plain TextZocchi, Fabio E. (2007) Generation-recombination and thermal noise coupling in the drift-diffusion model. Journal of Applied Physics, 102 (10). 103712pp. doi:10.1063/1.2811847
In(2007, November) Journal of Applied Physics Vol. 102 (10) AIP Publishing

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Lazzaroni, Massimo, Zocchi, Fabio E (2005) Effect of single-particle correlation on the spectrum of generation and recombination noise in semiconductors. Journal of Physics D: Applied Physics, 38. 2173-2178 doi:10.1088/0022-3727/38/13/015
Zocchi, Fabio E. (2006) Current and voltage noise spectrum due to generation and recombination fluctuations in semiconductors. Physical Review B, 73 (3) doi:10.1103/physrevb.73.035203
Smith, D. L. (1982) Theory of generation‐recombination noise in intrinsic photoconductors. Journal of Applied Physics, 53 (10). 7051-7060 doi:10.1063/1.330006
Gatti, E., Sampietro, M., Zocchi, F. E. (1993) Determination of the interaction coordinate in drift detectors through the timing of induced signals. Journal of Applied Physics, 74 (10). 5940-5945 doi:10.1063/1.355205
Lazzaroni, Massimo, Zocchi, Fabio E. (2004) Noise of the induced signal pulses in semiconductor drift detectors. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 523 (1). 126-133 doi:10.1016/j.nima.2003.12.023
Rao, Hemant, Bosman, Gijs (2009) Simultaneous low-frequency noise characterization of gate and drain currents in AlGaN/GaN high electron mobility transistors. Journal of Applied Physics, 106 (10). 103712pp. doi:10.1063/1.3259437
Teitler, S. (1963) Generation—Recombination Noise in an Impurity Semiconductor. Journal of Applied Physics, 34 (9). 2751-2753 doi:10.1063/1.1729804
Hill, J. E., Van Vliet, K. M. (1958) Generation Recombination Noise in Intrinsic and Near‐Intrinsic Germanium Crystals. Journal of Applied Physics, 29 (2). 177-182 doi:10.1063/1.1723061
Park, Chan Hyeong (2022) Generation–recombination noise in uniformly doped semiconductors with contacts of finite surface recombination velocities. Journal of Applied Physics, 132 (21) 214501 doi:10.1063/5.0111954
Spicer, W. E. (1959) Relationship between Signal‐to‐Noise Ratio and Threshold of Response of Infrared Photoconductors Limited by Generation‐Recombination Noise. Journal of Applied Physics, 30 (9). 1381-1384 doi:10.1063/1.1735339
Teitler, S. (1958) Generation‐Recombination Noise in a Two‐Level Impurity Semiconductor. Journal of Applied Physics, 29 (11). 1585-1587 doi:10.1063/1.1722998
 
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