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Arivanandhan, Mukannan, Gotoh, Raira, Fujiwara, Kozo, Uda, Satoshi (2009) Effects of B and Ge codoping on minority carrier lifetime in Ga-doped Czochralski-silicon. Journal of Applied Physics, 106 (1). 13721pp. doi:10.1063/1.3159038

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Reference TypeJournal (article/letter/editorial)
TitleEffects of B and Ge codoping on minority carrier lifetime in Ga-doped Czochralski-silicon
JournalJournal of Applied Physics
AuthorsArivanandhan, MukannanAuthor
Gotoh, RairaAuthor
Fujiwara, KozoAuthor
Uda, SatoshiAuthor
Year2009 (July)Volume106
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.3159038Search in ResearchGate
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Mindat Ref. ID5166988Long-form Identifiermindat:1:5:5166988:1
GUID0
Full ReferenceArivanandhan, Mukannan, Gotoh, Raira, Fujiwara, Kozo, Uda, Satoshi (2009) Effects of B and Ge codoping on minority carrier lifetime in Ga-doped Czochralski-silicon. Journal of Applied Physics, 106 (1). 13721pp. doi:10.1063/1.3159038
Plain TextArivanandhan, Mukannan, Gotoh, Raira, Fujiwara, Kozo, Uda, Satoshi (2009) Effects of B and Ge codoping on minority carrier lifetime in Ga-doped Czochralski-silicon. Journal of Applied Physics, 106 (1). 13721pp. doi:10.1063/1.3159038
In(2009, July) Journal of Applied Physics Vol. 106 (1) AIP Publishing

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Arivanandhan, Mukannan, Gotoh, Raira, Fujiwara, Kozo, Uda, Satoshi (2009) High minority carrier lifetime in Ga-doped Czochralski-grown silicon by Ge codoping. Applied Physics Letters, 94 (7). 72102pp. doi:10.1063/1.3085959
Arivanandhan, Mukannan, Gotoh, Raira, Fujiwara, Kozo, Ozawa, Tetsuo, Hayakawa, Yasuhiro, Uda, Satoshi (2011) The impact of Ge codoping on grown-in O precipitates in Ga-doped Czochralski-silicon. Journal of Crystal Growth, 321 (1). 24-28 doi:10.1016/j.jcrysgro.2011.02.028
Arivanandhan, Mukannan, Gotoh, Raira, Watahiki, Tatsuro, Fujiwara, Kozo, Hayakawa, Yasuhiro, Uda, Satoshi, Konagai, Makoto (2012) The impact of Ge codoping on the enhancement of photovoltaic characteristics of B-doped Czochralski grown Si crystal. Journal of Applied Physics, 111 (4). 43707pp. doi:10.1063/1.3687935
Gotoh, Raira, Arivanandhan, M., Fujiwara, Kozo, Uda, Satoshi (2010) Ga segregation during Czochralski-Si crystal growth with Ge codoping. Journal of Crystal Growth, 312 (20). 2865-2870 doi:10.1016/j.jcrysgro.2010.07.007
Arivanandhan, Mukannan, Gotoh, Raira, Fujiwara, Kozo, Uda, Satoshi, Hayakawa, Yasuhiro (2015) Segregation of Ge in B and Ge codoped Czochralski-Si crystal growth. Journal of Alloys and Compounds, 639. 588-592 doi:10.1016/j.jallcom.2015.03.155
Arivanandhan, Mukannan, Raira, Gotoh, Fujiwara, Kozo, Uda, Satoshi, Hayakawa, Yasuhiro, Konagai, Makoto (2013) Germanium-doped Czochralski silicon: a novel material for solar cells. physica status solidi (c), 10 (12). 1746-1749 doi:10.1002/pssc.201300394
Huang, Xinming, Arivanandhan, M., Gotoh, Raira, Hoshikawa, Takeshi, Uda, Satoshi (2008) Ga segregation in Czochralski-Si crystal growth with B codoping. Journal of Crystal Growth, 310 (14). 3335-3341 doi:10.1016/j.jcrysgro.2008.04.013
Yang, Xinbo, Fujiwara, Kozo, Gotoh, Raira, Maeda, Kensaku, Nozawa, Jun, Koizumi, Haruhiko, Uda, Satoshi (2010) Effect of twin spacing on the growth velocity of Si faceted dendrites. Applied Physics Letters, 97 (17). 172104pp. doi:10.1063/1.3501974
Gotoh, Raira, Fujiwara, Kozo, Yang, Xinbo, Koizumi, Haruhiko, Nozawa, Jun, Uda, Satoshi (2012) Formation mechanism of cellular structures during unidirectional growth of binary semiconductor Si-rich SiGe materials. Applied Physics Letters, 100 (2). 21903pp. doi:10.1063/1.3675860
Yoon, Yohan, Yan, Yixin, Ostrom, Nels P., Kim, Jinwoo, Rozgonyi, George (2012) Deep level transient spectroscopy and minority carrier lifetime study on Ga-doped continuous Czochralski silicon. Applied Physics Letters, 101 (22). 222107pp. doi:10.1063/1.4766337
Nampalli, N., Hallam, B., Chan, C., Abbott, M., Wenham, S. (2015) Evidence for the role of hydrogen in the stabilization of minority carrier lifetime in boron-doped Czochralski silicon. Applied Physics Letters, 106 (17). 173501pp. doi:10.1063/1.4919385
 
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