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Zhang, F., Li, X. M., Gao, X. D., Wu, L., Cao, X., Liu, X. J., Yang, R. (2011) The unification of filament and interfacial resistive switching mechanisms for titanium dioxide based memory devices. Journal of Applied Physics, 109 (10). 104504pp. doi:10.1063/1.3583669

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Reference TypeJournal (article/letter/editorial)
TitleThe unification of filament and interfacial resistive switching mechanisms for titanium dioxide based memory devices
JournalJournal of Applied Physics
AuthorsZhang, F.Author
Li, X. M.Author
Gao, X. D.Author
Wu, L.Author
Cao, X.Author
Liu, X. J.Author
Yang, R.Author
Year2011 (May 15)Volume109
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.3583669Search in ResearchGate
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Mindat Ref. ID5178768Long-form Identifiermindat:1:5:5178768:2
GUID0
Full ReferenceZhang, F., Li, X. M., Gao, X. D., Wu, L., Cao, X., Liu, X. J., Yang, R. (2011) The unification of filament and interfacial resistive switching mechanisms for titanium dioxide based memory devices. Journal of Applied Physics, 109 (10). 104504pp. doi:10.1063/1.3583669
Plain TextZhang, F., Li, X. M., Gao, X. D., Wu, L., Cao, X., Liu, X. J., Yang, R. (2011) The unification of filament and interfacial resistive switching mechanisms for titanium dioxide based memory devices. Journal of Applied Physics, 109 (10). 104504pp. doi:10.1063/1.3583669
In(2011, May) Journal of Applied Physics Vol. 109 (10) AIP Publishing

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