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Ahmad, Ijaz, Marinova, Vera, Vrielinck, Henk, Callens, Freddy, Goovaerts, Etienne (2011) A photosensitive Cr3+ center in photorefractive Bi12SiO20 crystals co-doped with chromium and phosphorus. Journal of Applied Physics, 109 (8). 83506pp. doi:10.1063/1.3561503

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Reference TypeJournal (article/letter/editorial)
TitleA photosensitive Cr3+ center in photorefractive Bi12SiO20 crystals co-doped with chromium and phosphorus
JournalJournal of Applied Physics
AuthorsAhmad, IjazAuthor
Marinova, VeraAuthor
Vrielinck, HenkAuthor
Callens, FreddyAuthor
Goovaerts, EtienneAuthor
Year2011 (April 15)Volume109
Issue8
PublisherAIP Publishing
DOIdoi:10.1063/1.3561503Search in ResearchGate
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Mindat Ref. ID5182605Long-form Identifiermindat:1:5:5182605:1
GUID0
Full ReferenceAhmad, Ijaz, Marinova, Vera, Vrielinck, Henk, Callens, Freddy, Goovaerts, Etienne (2011) A photosensitive Cr3+ center in photorefractive Bi12SiO20 crystals co-doped with chromium and phosphorus. Journal of Applied Physics, 109 (8). 83506pp. doi:10.1063/1.3561503
Plain TextAhmad, Ijaz, Marinova, Vera, Vrielinck, Henk, Callens, Freddy, Goovaerts, Etienne (2011) A photosensitive Cr3+ center in photorefractive Bi12SiO20 crystals co-doped with chromium and phosphorus. Journal of Applied Physics, 109 (8). 83506pp. doi:10.1063/1.3561503
In(2011, April) Journal of Applied Physics Vol. 109 (8) AIP Publishing

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Ahmad, Ijaz, Marinova, Vera, Goovaerts, Etienne (2009) High-frequency electron paramagnetic resonance of the hole-trapped antisite bismuth center in photorefractive bismuth sillenite crystals. Physical Review B, 79 (3) doi:10.1103/physrevb.79.033107
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Marinova, V., Ahmad, I., Goovaerts, E. (2010) Photoinduced absorption study of carrier dynamics in Ru-doped Bi12SiO20 crystals after nanosecond laser pulse excitation. Journal of Applied Physics, 107 (11). 113106pp. doi:10.1063/1.3418443
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Vercammen, H., Schoemaker, D., Käss, H., Goovaerts, E., Bouwen, A., Vrielinck, H., Callens, F. (1998) Electron spin resonance of rhodium-vacancy complexes in solution-grown NaCl crystals. Journal of Applied Physics, 84 (1). 428-432 doi:10.1063/1.368045
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