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Ge, Jia, Ling, Zhi Peng, Wong, Johnson, Stangl, Rolf, Aberle, Armin G., Mueller, Thomas (2013) Analysis of intrinsic hydrogenated amorphous silicon passivation layer growth for use in heterojunction silicon wafer solar cells by optical emission spectroscopy. Journal of Applied Physics, 113 (23). 234310pp. doi:10.1063/1.4810900

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Reference TypeJournal (article/letter/editorial)
TitleAnalysis of intrinsic hydrogenated amorphous silicon passivation layer growth for use in heterojunction silicon wafer solar cells by optical emission spectroscopy
JournalJournal of Applied Physics
AuthorsGe, JiaAuthor
Ling, Zhi PengAuthor
Wong, JohnsonAuthor
Stangl, RolfAuthor
Aberle, Armin G.Author
Mueller, ThomasAuthor
Year2013 (June 21)Volume113
Issue23
PublisherAIP Publishing
DOIdoi:10.1063/1.4810900Search in ResearchGate
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Mindat Ref. ID5193241Long-form Identifiermindat:1:5:5193241:3
GUID0
Full ReferenceGe, Jia, Ling, Zhi Peng, Wong, Johnson, Stangl, Rolf, Aberle, Armin G., Mueller, Thomas (2013) Analysis of intrinsic hydrogenated amorphous silicon passivation layer growth for use in heterojunction silicon wafer solar cells by optical emission spectroscopy. Journal of Applied Physics, 113 (23). 234310pp. doi:10.1063/1.4810900
Plain TextGe, Jia, Ling, Zhi Peng, Wong, Johnson, Stangl, Rolf, Aberle, Armin G., Mueller, Thomas (2013) Analysis of intrinsic hydrogenated amorphous silicon passivation layer growth for use in heterojunction silicon wafer solar cells by optical emission spectroscopy. Journal of Applied Physics, 113 (23). 234310pp. doi:10.1063/1.4810900
In(2013, June) Journal of Applied Physics Vol. 113 (23) AIP Publishing


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