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Gupta, Shashank, Paramahans Manik, Prashanth, Kesh Mishra, Ravi, Nainani, Aneesh, Abraham, Mathew C., Lodha, Saurabh (2013) Contact resistivity reduction through interfacial layer doping in metal-interfacial layer-semiconductor contacts. Journal of Applied Physics, 113 (23). 234505pp. doi:10.1063/1.4811340

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Reference TypeJournal (article/letter/editorial)
TitleContact resistivity reduction through interfacial layer doping in metal-interfacial layer-semiconductor contacts
JournalJournal of Applied Physics
AuthorsGupta, ShashankAuthor
Paramahans Manik, PrashanthAuthor
Kesh Mishra, RaviAuthor
Nainani, AneeshAuthor
Abraham, Mathew C.Author
Lodha, SaurabhAuthor
Year2013 (June 21)Volume113
Issue23
PublisherAIP Publishing
DOIdoi:10.1063/1.4811340Search in ResearchGate
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Mindat Ref. ID5193259Long-form Identifiermindat:1:5:5193259:2
GUID0
Full ReferenceGupta, Shashank, Paramahans Manik, Prashanth, Kesh Mishra, Ravi, Nainani, Aneesh, Abraham, Mathew C., Lodha, Saurabh (2013) Contact resistivity reduction through interfacial layer doping in metal-interfacial layer-semiconductor contacts. Journal of Applied Physics, 113 (23). 234505pp. doi:10.1063/1.4811340
Plain TextGupta, Shashank, Paramahans Manik, Prashanth, Kesh Mishra, Ravi, Nainani, Aneesh, Abraham, Mathew C., Lodha, Saurabh (2013) Contact resistivity reduction through interfacial layer doping in metal-interfacial layer-semiconductor contacts. Journal of Applied Physics, 113 (23). 234505pp. doi:10.1063/1.4811340
In(2013, June) Journal of Applied Physics Vol. 113 (23) AIP Publishing

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