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García Núñez, C., Braña, A. F., Pau, J. L., Ghita, D., García, B. J., Shen, G., Wilbert, D. S., Kim, S. M., Kung, P. (2014) Surface optical phonons in GaAs nanowires grown by Ga-assisted chemical beam epitaxy. Journal of Applied Physics, 115 (3). 34307pp. doi:10.1063/1.4862742

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Reference TypeJournal (article/letter/editorial)
TitleSurface optical phonons in GaAs nanowires grown by Ga-assisted chemical beam epitaxy
JournalJournal of Applied Physics
AuthorsGarcía Núñez, C.Author
Braña, A. F.Author
Pau, J. L.Author
Ghita, D.Author
García, B. J.Author
Shen, G.Author
Wilbert, D. S.Author
Kim, S. M.Author
Kung, P.Author
Year2014 (January 21)Volume115
Issue3
PublisherAIP Publishing
DOIdoi:10.1063/1.4862742Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5198101Long-form Identifiermindat:1:5:5198101:1
GUID0
Full ReferenceGarcía Núñez, C., Braña, A. F., Pau, J. L., Ghita, D., García, B. J., Shen, G., Wilbert, D. S., Kim, S. M., Kung, P. (2014) Surface optical phonons in GaAs nanowires grown by Ga-assisted chemical beam epitaxy. Journal of Applied Physics, 115 (3). 34307pp. doi:10.1063/1.4862742
Plain TextGarcía Núñez, C., Braña, A. F., Pau, J. L., Ghita, D., García, B. J., Shen, G., Wilbert, D. S., Kim, S. M., Kung, P. (2014) Surface optical phonons in GaAs nanowires grown by Ga-assisted chemical beam epitaxy. Journal of Applied Physics, 115 (3). 34307pp. doi:10.1063/1.4862742
In(2014, January) Journal of Applied Physics Vol. 115 (3) AIP Publishing

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García Núñez, C., Braña, A.F., López, N., García, B.J. (2015) GaAs nanowires grown by Ga-assisted chemical beam epitaxy: Substrate preparation and growth kinetics. Journal of Crystal Growth, 430. 108-115 doi:10.1016/j.jcrysgro.2015.08.008
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Ballingall, J. M., Morris, B. J., Leopold, D. J., Rode, D. L. (1986) Silicon autocompensation in GaAs grown by molecular‐beam epitaxy. Journal of Applied Physics, 59 (10). 3571-3573 doi:10.1063/1.336780
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