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Harris, Thomas R., Yeo, Yung Kee, Ryu, Mee-Yi, Beeler, Richard T., Kouvetakis, John (2014) Observation of heavy- and light-hole split direct bandgap photoluminescence from tensile-strained GeSn (0.03% Sn). Journal of Applied Physics, 116 (10). 103502pp. doi:10.1063/1.4894870

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Reference TypeJournal (article/letter/editorial)
TitleObservation of heavy- and light-hole split direct bandgap photoluminescence from tensile-strained GeSn (0.03% Sn)
JournalJournal of Applied Physics
AuthorsHarris, Thomas R.Author
Yeo, Yung KeeAuthor
Ryu, Mee-YiAuthor
Beeler, Richard T.Author
Kouvetakis, JohnAuthor
Year2014 (September 14)Volume116
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.4894870Search in ResearchGate
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Mindat Ref. ID5198744Long-form Identifiermindat:1:5:5198744:0
GUID0
Full ReferenceHarris, Thomas R., Yeo, Yung Kee, Ryu, Mee-Yi, Beeler, Richard T., Kouvetakis, John (2014) Observation of heavy- and light-hole split direct bandgap photoluminescence from tensile-strained GeSn (0.03% Sn). Journal of Applied Physics, 116 (10). 103502pp. doi:10.1063/1.4894870
Plain TextHarris, Thomas R., Yeo, Yung Kee, Ryu, Mee-Yi, Beeler, Richard T., Kouvetakis, John (2014) Observation of heavy- and light-hole split direct bandgap photoluminescence from tensile-strained GeSn (0.03% Sn). Journal of Applied Physics, 116 (10). 103502pp. doi:10.1063/1.4894870
In(2014, September) Journal of Applied Physics Vol. 116 (10) AIP Publishing

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Ryu, Mee-Yi, Harris, Tom R., Yeo, Y. K., Beeler, R. T., Kouvetakis, J. (2013) Temperature-dependent photoluminescence of Ge/Si and Ge1-ySny/Si, indicating possible indirect-to-direct bandgap transition at lower Sn content. Applied Physics Letters, 102 (17). 171908pp. doi:10.1063/1.4803927
Roucka, Radek, Beeler, Richard, Mathews, Jay, Ryu, Mee-Yi, Kee Yeo, Yung, Menéndez, José, Kouvetakis, John (2011) Complementary metal-oxide semiconductor-compatible detector materials with enhanced 1550 nm responsivity via Sn-doping of Ge/Si(100). Journal of Applied Physics, 109 (10). 103115pp. doi:10.1063/1.3592965
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Ryu, Mee-Yi, Yeo, Y. K., Ahoujja, M., Harris, Tom, Beeler, Richard, Kouvetakis, John (2012) Degenerate parallel conducting layer and conductivity type conversion observed from p-Ge1−ySny (y = 0.06%) grown on n-Si substrate. Applied Physics Letters, 101 (13). 131110pp. doi:10.1063/1.4754625
Hogsed, Michael R., Yeo, Yung Kee, Ahoujja, Mo, Ryu, Mee-Yi, Petrosky, James C., Hengehold, Robert L. (2005) Radiation-induced electron traps in Al0.14Ga0.86N by 1 MeV electron radiation. Applied Physics Letters, 86 (26). 261906pp. doi:10.1063/1.1977185
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