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Chen, Yulu, Wu, Shan, Ma, Yinjie, Fan, Yongliang, Yang, Xinju, Zhong, Zhenyang, Jiang, Zuimin (2014) Erratum: “Tunable photoluminescence of self-assembled GeSi quantum dots by B+ implantation and rapid thermal annealing” [J. Appl. Phys. 115, 233502 (2014)]. Journal of Applied Physics, 116 (10). 109902pp. doi:10.1063/1.4895492

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Reference TypeJournal (article/letter/editorial)
TitleErratum: “Tunable photoluminescence of self-assembled GeSi quantum dots by B+ implantation and rapid thermal annealing” [J. Appl. Phys. 115, 233502 (2014)]
JournalJournal of Applied Physics
AuthorsChen, YuluAuthor
Wu, ShanAuthor
Ma, YinjieAuthor
Fan, YongliangAuthor
Yang, XinjuAuthor
Zhong, ZhenyangAuthor
Jiang, ZuiminAuthor
Year2014 (September 14)Volume116
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.4895492Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5198785Long-form Identifiermindat:1:5:5198785:7
GUID0
Full ReferenceChen, Yulu, Wu, Shan, Ma, Yinjie, Fan, Yongliang, Yang, Xinju, Zhong, Zhenyang, Jiang, Zuimin (2014) Erratum: “Tunable photoluminescence of self-assembled GeSi quantum dots by B+ implantation and rapid thermal annealing” [J. Appl. Phys. 115, 233502 (2014)]. Journal of Applied Physics, 116 (10). 109902pp. doi:10.1063/1.4895492
Plain TextChen, Yulu, Wu, Shan, Ma, Yinjie, Fan, Yongliang, Yang, Xinju, Zhong, Zhenyang, Jiang, Zuimin (2014) Erratum: “Tunable photoluminescence of self-assembled GeSi quantum dots by B+ implantation and rapid thermal annealing” [J. Appl. Phys. 115, 233502 (2014)]. Journal of Applied Physics, 116 (10). 109902pp. doi:10.1063/1.4895492
In(2014, September) Journal of Applied Physics Vol. 116 (10) AIP Publishing

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Chen, Yulu, Wu, Shan, Ma, Yinjie, Fan, Yongliang, Yang, Xinju, Zhong, Zhenyang, Jiang, Zuimin (2014) Tunable photoluminescence of self-assembled GeSi quantum dots by B+ implantation and rapid thermal annealing. Journal of Applied Physics, 115 (23). 233502pp. doi:10.1063/1.4882026
Chen, Yulu, Wu, Qiong, Ma, Yingjie, Liu, Tao, Fan, Yongliang, Yang, Xinju, Zhong, Zhenyang, Xu, Fei, Lu, Jianping, Jiang, Zuimin (2016) Plasmon-gating photoluminescence in graphene/GeSi quantum dots hybrid structures. Scientific Reports, 5. doi:10.1038/srep17688
Ma, Yingjie, Huang, Shufan, Zeng, Cheng, Zhou, Tianyuan, Zhong, Zhenyang, Zhou, Tong, Fan, Yongliang, Yang, Xinju, Xia, Jinsong, Jiang, Zuimin (2014) Towards controllable growth of self-assembled SiGe single and double quantum dot nanostructures. Nanoscale, 6. 3941-3948 doi:10.1039/c3nr04114j
Zhang, Shengli, Lv, Yi, Jiang, Zuimin, Yang, Xinju (2011) Electrical properties of individual self-assembled GeSi quantum rings. Journal of Applied Physics, 110 (9). 94313pp. doi:10.1063/1.3658816
Zhou, Tong, Zeng, Cheng, Ma, Qianqian, Ma, Yingjie, Fan, Yongliang, Jiang, Zuimin, Xia, Jinsong, Zhong, Zhenyang (2014) Controlled formation of GeSi nanostructures on periodic Si (001) sub-micro pillars. Nanoscale, 6. 3925-3929 doi:10.1039/c3nr04146h
Huang, Shufan, Zhang, Haifeng, Wu, Zilong, Kong, Dezi, Lin, Dongdong, Fan, Yongliang, Yang, Xinju, Zhong, Zhenyang, Huang, Shihua, Jiang, Zuimin, Cheng, Chuanwei (2014) Large-Area Ordered P-type Si Nanowire Arrays as Photocathode for Highly Efficient Photoelectrochemical Hydrogen Generation. ACS Applied Materials & Interfaces, 6. 12111-12118 doi:10.1021/am501168c
Grossi, D. F., Smereka, P., Keizer, J. G., Ulloa, J. M., Koenraad, P. M. (2014) Erratum: “Height control of self-assembled quantum dots by strain engineering during capping” [Appl. Phys. Lett. 105, 143104 (2014)]. Applied Physics Letters, 105 (19). 199901pp. doi:10.1063/1.4901731
Yang, Hongbin, Tao, Zhensheng, Lin, Jianhui, Lu, Fang, Jiang, Zuimin, Zhong, Zhenyang (2008) Systematic studies of the photoluminescence of Ge quantum dots grown on strained Si0.7Ge0.3 buffer layer. Applied Physics Letters, 92 (11). 111907pp. doi:10.1063/1.2901873
Chen, Y. L., Ma, Y. J., Chen, D. D., Wang, W. Q., Ding, K., Wu, Q., Fan, Y. L., Yang, X. J., Zhong, Z. Y., Xu, F., Jiang, Z. M. (2014) Effect of graphene on photoluminescence properties of graphene/GeSi quantum dot hybrid structures. Applied Physics Letters, 105 (2). 21104pp. doi:10.1063/1.4889890
Zhong, Zhenyang, Chen, Peixuan, Jiang, Zuimin, Bauer, Guenther (2008) Temperature dependence of ordered GeSi island growth on patterned Si (001) substrates. Applied Physics Letters, 93 (4). 43106pp. doi:10.1063/1.2965484
Pan, Jinzhao, Zhou, Tong, Jiang, Zuimin, Zhong, Zhenyang (2013) Anomalous magnetoresistance of an array of GeSi nanowires. Applied Physics Letters, 102 (18). 183108pp. doi:10.1063/1.4804295
 
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