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Liu, Li, Zhang, Miao, Hu, Lijuan, Di, Zengfeng, Zhao, Shi-Jin (2014) Effect of tensile strain on the electronic structure of Ge: A first-principles calculation. Journal of Applied Physics, 116 (11). 113105pp. doi:10.1063/1.4896253

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Reference TypeJournal (article/letter/editorial)
TitleEffect of tensile strain on the electronic structure of Ge: A first-principles calculation
JournalJournal of Applied Physics
AuthorsLiu, LiAuthor
Zhang, MiaoAuthor
Hu, LijuanAuthor
Di, ZengfengAuthor
Zhao, Shi-JinAuthor
Year2014 (September 21)Volume116
Issue11
PublisherAIP Publishing
DOIdoi:10.1063/1.4896253Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5198869Long-form Identifiermindat:1:5:5198869:8
GUID0
Full ReferenceLiu, Li, Zhang, Miao, Hu, Lijuan, Di, Zengfeng, Zhao, Shi-Jin (2014) Effect of tensile strain on the electronic structure of Ge: A first-principles calculation. Journal of Applied Physics, 116 (11). 113105pp. doi:10.1063/1.4896253
Plain TextLiu, Li, Zhang, Miao, Hu, Lijuan, Di, Zengfeng, Zhao, Shi-Jin (2014) Effect of tensile strain on the electronic structure of Ge: A first-principles calculation. Journal of Applied Physics, 116 (11). 113105pp. doi:10.1063/1.4896253
In(2014, September) Journal of Applied Physics Vol. 116 (11) AIP Publishing

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