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Goux, L., Raghavan, N., Fantini, A., Nigon, R., Strangio, S., Degraeve, R., Kar, G., Chen, Y. Y., De Stefano, F., Afanas'ev, V. V., Jurczak, M. (2014) On the bipolar resistive-switching characteristics of Al2O3- and HfO2-based memory cells operated in the soft-breakdown regime. Journal of Applied Physics, 116 (13). 134502pp. doi:10.1063/1.4896841

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Reference TypeJournal (article/letter/editorial)
TitleOn the bipolar resistive-switching characteristics of Al2O3- and HfO2-based memory cells operated in the soft-breakdown regime
JournalJournal of Applied Physics
AuthorsGoux, L.Author
Raghavan, N.Author
Fantini, A.Author
Nigon, R.Author
Strangio, S.Author
Degraeve, R.Author
Kar, G.Author
Chen, Y. Y.Author
De Stefano, F.Author
Afanas'ev, V. V.Author
Jurczak, M.Author
Year2014 (October 7)Volume116
Issue13
PublisherAIP Publishing
DOIdoi:10.1063/1.4896841Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5198997Long-form Identifiermindat:1:5:5198997:0
GUID0
Full ReferenceGoux, L., Raghavan, N., Fantini, A., Nigon, R., Strangio, S., Degraeve, R., Kar, G., Chen, Y. Y., De Stefano, F., Afanas'ev, V. V., Jurczak, M. (2014) On the bipolar resistive-switching characteristics of Al2O3- and HfO2-based memory cells operated in the soft-breakdown regime. Journal of Applied Physics, 116 (13). 134502pp. doi:10.1063/1.4896841
Plain TextGoux, L., Raghavan, N., Fantini, A., Nigon, R., Strangio, S., Degraeve, R., Kar, G., Chen, Y. Y., De Stefano, F., Afanas'ev, V. V., Jurczak, M. (2014) On the bipolar resistive-switching characteristics of Al2O3- and HfO2-based memory cells operated in the soft-breakdown regime. Journal of Applied Physics, 116 (13). 134502pp. doi:10.1063/1.4896841
In(2014, October) Journal of Applied Physics Vol. 116 (13) AIP Publishing

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Goux, L., Czarnecki, P., Chen, Y. Y., Pantisano, L., Wang, X. P., Degraeve, R., Govoreanu, B., Jurczak, M., Wouters, D. J., Altimime, L. (2010) Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells. Applied Physics Letters, 97 (24). 243509pp. doi:10.1063/1.3527086
Hou, Y., Celano, U., Goux, L., Liu, L., Fantini, A., Degraeve, R., Youssef, A., Xu, Z., Cheng, Y., Kang, J., Jurczak, M., Vandervorst, W. (2016) Sub-10 nm low current resistive switching behavior in hafnium oxide stack. Applied Physics Letters, 108 (12). 123106pp. doi:10.1063/1.4944841
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Goux, L., Kim, J. Y., Magyari-Kope, B., Nishi, Y., Redolfi, A., Jurczak, M. (2015) H-treatment impact on conductive-filament formation and stability in Ta2O5-based resistive-switching memory cells. Journal of Applied Physics, 117 (12). 124501pp. doi:10.1063/1.4915946
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