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Tawfik, Wael Z., Hyeon, Gil Yong, Lee, June Key (2014) Stress-induced piezoelectric field in GaN-based 450-nm light-emitting diodes. Journal of Applied Physics, 116 (16). 164503pp. doi:10.1063/1.4900496

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Reference TypeJournal (article/letter/editorial)
TitleStress-induced piezoelectric field in GaN-based 450-nm light-emitting diodes
JournalJournal of Applied Physics
AuthorsTawfik, Wael Z.Author
Hyeon, Gil YongAuthor
Lee, June KeyAuthor
Year2014 (October 28)Volume116
Issue16
PublisherAIP Publishing
DOIdoi:10.1063/1.4900496Search in ResearchGate
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Mindat Ref. ID5199218Long-form Identifiermindat:1:5:5199218:7
GUID0
Full ReferenceTawfik, Wael Z., Hyeon, Gil Yong, Lee, June Key (2014) Stress-induced piezoelectric field in GaN-based 450-nm light-emitting diodes. Journal of Applied Physics, 116 (16). 164503pp. doi:10.1063/1.4900496
Plain TextTawfik, Wael Z., Hyeon, Gil Yong, Lee, June Key (2014) Stress-induced piezoelectric field in GaN-based 450-nm light-emitting diodes. Journal of Applied Physics, 116 (16). 164503pp. doi:10.1063/1.4900496
In(2014, October) Journal of Applied Physics Vol. 116 (16) AIP Publishing

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