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Chichibu, S. F., Hazu, K., Furusawa, K., Ishikawa, Y., Onuma, T., Ohtomo, T., Ikeda, H., Fujito, K. (2014) High internal quantum efficiency ultraviolet to green luminescence peaks from pseudomorphic m-plane Al1−xInxN epilayers grown on a low defect density m-plane freestanding GaN substrate. Journal of Applied Physics, 116 (21). 213501pp. doi:10.1063/1.4902315

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Reference TypeJournal (article/letter/editorial)
TitleHigh internal quantum efficiency ultraviolet to green luminescence peaks from pseudomorphic m-plane Al1−xInxN epilayers grown on a low defect density m-plane freestanding GaN substrate
JournalJournal of Applied Physics
AuthorsChichibu, S. F.Author
Hazu, K.Author
Furusawa, K.Author
Ishikawa, Y.Author
Onuma, T.Author
Ohtomo, T.Author
Ikeda, H.Author
Fujito, K.Author
Year2014 (December 7)Volume116
Issue21
PublisherAIP Publishing
DOIdoi:10.1063/1.4902315Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5199574Long-form Identifiermindat:1:5:5199574:0
GUID0
Full ReferenceChichibu, S. F., Hazu, K., Furusawa, K., Ishikawa, Y., Onuma, T., Ohtomo, T., Ikeda, H., Fujito, K. (2014) High internal quantum efficiency ultraviolet to green luminescence peaks from pseudomorphic m-plane Al1−xInxN epilayers grown on a low defect density m-plane freestanding GaN substrate. Journal of Applied Physics, 116 (21). 213501pp. doi:10.1063/1.4902315
Plain TextChichibu, S. F., Hazu, K., Furusawa, K., Ishikawa, Y., Onuma, T., Ohtomo, T., Ikeda, H., Fujito, K. (2014) High internal quantum efficiency ultraviolet to green luminescence peaks from pseudomorphic m-plane Al1−xInxN epilayers grown on a low defect density m-plane freestanding GaN substrate. Journal of Applied Physics, 116 (21). 213501pp. doi:10.1063/1.4902315
In(2014, December) Journal of Applied Physics Vol. 116 (21) AIP Publishing

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Hoshi, T., Hazu, K., Ohshita, K., Kagaya, M., Onuma, T., Fujito, K., Namita, H., Chichibu, S. F. (2009) Impacts of anisotropic lattice relaxation on crystal mosaicity and luminescence spectra of m-plane AlxGa1−xN films grown on m-plane freestanding GaN substrates by NH3 source molecular beam epitaxy. Applied Physics Letters, 94 (7). 71910pp. doi:10.1063/1.3089248
Ishikawa, Y., Tashiro, M., Hazu, K., Furusawa, K., Namita, H., Nagao, S., Fujito, K., Chichibu, S. F. (2012) Local lifetime and luminescence efficiency for the near-band-edge emission of freestanding GaN substrates determined using spatio-time-resolved cathodoluminescence. Applied Physics Letters, 101 (21). 212106pp. doi:10.1063/1.4767357
Chichibu, S. F., Yamaguchi, H., Zhao, L., Kubota, M., Onuma, T., Okamoto, K., Ohta, H. (2008) Improved characteristics and issues of m-plane InGaN films grown on low defect density m-plane freestanding GaN substrates by metalorganic vapor phase epitaxy. Applied Physics Letters, 93 (15). 151908pp. doi:10.1063/1.2998580
Kojima, Kazunobu, Kagaya, Daiki, Yamazaki, Yoshiki, Ikeda, Hirotaka, Fujito, Kenji, Chichibu, Shigefusa F. (2016) Spectroscopic ellipsometry studies on them-plane Al1−xInxN epilayers grown by metalorganic vapor phase epitaxy on a freestanding GaN substrate. Japanese Journal of Applied Physics, 55 (5) 5 doi:10.7567/jjap.55.05fg04
Chichibu, S. F., Hazu, K., Ishikawa, Y., Tashiro, M., Namita, H., Nagao, S., Fujito, K., Uedono, A. (2012) Time-resolved photoluminescence, positron annihilation, and Al0.23Ga0.77N/GaN heterostructure growth studies on low defect density polar and nonpolar freestanding GaN substrates grown by hydride vapor phase epitaxy. Journal of Applied Physics, 111 (10). 103518pp. doi:10.1063/1.4717955
Onuma, T., Amaike, H., Kubota, M., Okamoto, K., Ohta, H., Ichihara, J., Takasu, H., Chichibu, S. F. (2007) Quantum-confined Stark effects in the m-plane In0.15Ga0.85N∕GaN multiple quantum well blue light-emitting diode fabricated on low defect density freestanding GaN substrate. Applied Physics Letters, 91 (18). 181903pp. doi:10.1063/1.2802042
Onuma, T., Okamoto, K., Ohta, H., Chichibu, S. F. (2008) Anisotropic optical gain in m-plane InxGa1−xN/GaN multiple quantum well laser diode wafers fabricated on the low defect density freestanding GaN substrates. Applied Physics Letters, 93 (9). 91112pp. doi:10.1063/1.2978242
Furusawa, K., Ishikawa, Y., Tashiro, M., Hazu, K., Nagao, S., Ikeda, H., Fujito, K., Chichibu, S. F. (2013) Local carrier dynamics around the sub-surface basal-plane stacking faults of GaN studied by spatio-time-resolved cathodoluminescence using a front-excitation-type photoelectron-gun. Applied Physics Letters, 103 (5). 52108pp. doi:10.1063/1.4817297
Chichibu, S. F., Kojima, K., Hazu, K., Ishikawa, Y., Furusawa, K., Mita, S., Collazo, R., Sitar, Z., Uedono, A. (2019) In-plane optical polarization and dynamic properties of the near-band-edge emission of an m-plane freestanding AlN substrate and a homoepitaxial film. Applied Physics Letters, 115 (15). 151903pp. doi:10.1063/1.5116900
Chichibu, S. F., Miyake, H., Ishikawa, Y., Tashiro, M., Ohtomo, T., Furusawa, K., Hazu, K., Hiramatsu, K., Uedono, A. (2013) Impacts of Si-doping and resultant cation vacancy formation on the luminescence dynamics for the near-band-edge emission of Al0.6Ga0.4N films grown on AlN templates by metalorganic vapor phase epitaxy. Journal of Applied Physics, 113 (21). 213506pp. doi:10.1063/1.4807906
Li, L. Y., Shima, K., Yamanaka, M., Egawa, T., Takeuchi, T., Miyoshi, M., Ishibashi, S., Uedono, A., Chichibu, S. F. (2022) Room-temperature nonradiative recombination lifetimes in c-plane Al1−xInxN epilayers nearly and modestly lattice-matched to GaN (0.11 ≤ x ≤ 0.21) Journal of Applied Physics, 132 (16) 163102 doi:10.1063/5.0106540
 
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