Whyte, J. R., McQuaid, R. G. P., Ashcroft, C. M., Einsle, J. F., Canalias, C., Gruverman, A., Gregg, J. M. (2014) Sequential injection of domain walls into ferroelectrics at different bias voltages: Paving the way for “domain wall memristors”. Journal of Applied Physics, 116 (6). 66813pp. doi:10.1063/1.4891347
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Sequential injection of domain walls into ferroelectrics at different bias voltages: Paving the way for “domain wall memristors” | ||
Journal | Journal of Applied Physics | ||
Authors | Whyte, J. R. | Author | |
McQuaid, R. G. P. | Author | ||
Ashcroft, C. M. | Author | ||
Einsle, J. F. | Author | ||
Canalias, C. | Author | ||
Gruverman, A. | Author | ||
Gregg, J. M. | Author | ||
Year | 2014 (August 14) | Volume | 116 |
Issue | 6 | ||
Publisher | AIP Publishing | ||
DOI | doi:10.1063/1.4891347Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 5200138 | Long-form Identifier | mindat:1:5:5200138:5 |
GUID | 0 | ||
Full Reference | Whyte, J. R., McQuaid, R. G. P., Ashcroft, C. M., Einsle, J. F., Canalias, C., Gruverman, A., Gregg, J. M. (2014) Sequential injection of domain walls into ferroelectrics at different bias voltages: Paving the way for “domain wall memristors”. Journal of Applied Physics, 116 (6). 66813pp. doi:10.1063/1.4891347 | ||
Plain Text | Whyte, J. R., McQuaid, R. G. P., Ashcroft, C. M., Einsle, J. F., Canalias, C., Gruverman, A., Gregg, J. M. (2014) Sequential injection of domain walls into ferroelectrics at different bias voltages: Paving the way for “domain wall memristors”. Journal of Applied Physics, 116 (6). 66813pp. doi:10.1063/1.4891347 | ||
In | (2014, August) Journal of Applied Physics Vol. 116 (6) AIP Publishing |
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