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Aslam, N., Longo, V., Rodenbücher, C., Roozeboom, F., Kessels, W. M. M., Szot, K., Waser, R., Hoffmann-Eifert, S. (2014) Impact of composition and crystallization behavior of atomic layer deposited strontium titanate films on the resistive switching of Pt/STO/TiN devices. Journal of Applied Physics, 116 (6). 64503pp. doi:10.1063/1.4891831

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Reference TypeJournal (article/letter/editorial)
TitleImpact of composition and crystallization behavior of atomic layer deposited strontium titanate films on the resistive switching of Pt/STO/TiN devices
JournalJournal of Applied Physics
AuthorsAslam, N.Author
Longo, V.Author
Rodenbücher, C.Author
Roozeboom, F.Author
Kessels, W. M. M.Author
Szot, K.Author
Waser, R.Author
Hoffmann-Eifert, S.Author
Year2014 (August 14)Volume116
Issue6
PublisherAIP Publishing
DOIdoi:10.1063/1.4891831Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5200157Long-form Identifiermindat:1:5:5200157:0
GUID0
Full ReferenceAslam, N., Longo, V., Rodenbücher, C., Roozeboom, F., Kessels, W. M. M., Szot, K., Waser, R., Hoffmann-Eifert, S. (2014) Impact of composition and crystallization behavior of atomic layer deposited strontium titanate films on the resistive switching of Pt/STO/TiN devices. Journal of Applied Physics, 116 (6). 64503pp. doi:10.1063/1.4891831
Plain TextAslam, N., Longo, V., Rodenbücher, C., Roozeboom, F., Kessels, W. M. M., Szot, K., Waser, R., Hoffmann-Eifert, S. (2014) Impact of composition and crystallization behavior of atomic layer deposited strontium titanate films on the resistive switching of Pt/STO/TiN devices. Journal of Applied Physics, 116 (6). 64503pp. doi:10.1063/1.4891831
In(2014, August) Journal of Applied Physics Vol. 116 (6) AIP Publishing

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