Reference Type | Journal (article/letter/editorial) |
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Title | Effects of rapid thermal annealing on properties of Ga-doped MgxZn1−xO films and Ga-doped MgxZn1−xO/AlGaN heterojunction diodes |
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Journal | Journal of Applied Physics |
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Authors | Hsueh, Kuang-Po | Author |
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Cheng, Po-Wei | Author |
Year | 2014 (August 14) | Volume | 116 |
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Issue | 6 |
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Publisher | AIP Publishing |
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DOI | doi:10.1063/1.4892591Search in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 5200174 | Long-form Identifier | mindat:1:5:5200174:7 |
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GUID | 0 |
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Full Reference | Hsueh, Kuang-Po, Cheng, Po-Wei (2014) Effects of rapid thermal annealing on properties of Ga-doped MgxZn1−xO films and Ga-doped MgxZn1−xO/AlGaN heterojunction diodes. Journal of Applied Physics, 116 (6). 63501pp. doi:10.1063/1.4892591 |
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Plain Text | Hsueh, Kuang-Po, Cheng, Po-Wei (2014) Effects of rapid thermal annealing on properties of Ga-doped MgxZn1−xO films and Ga-doped MgxZn1−xO/AlGaN heterojunction diodes. Journal of Applied Physics, 116 (6). 63501pp. doi:10.1063/1.4892591 |
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In | (2014, August) Journal of Applied Physics Vol. 116 (6) AIP Publishing |
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