Watch the Dallas Symposium LIVE, and fundraiser auction
Ticket proceeds support mindat.org! - click here...
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Molina, J., De La Hidalga, J., Gutierrez, E. (2014) Reduction in the interface-states density of metal-oxide-semiconductor field-effect transistors fabricated on high-index Si (114) surfaces by using an external magnetic field. Journal of Applied Physics, 116 (6). 64510pp. doi:10.1063/1.4892891

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleReduction in the interface-states density of metal-oxide-semiconductor field-effect transistors fabricated on high-index Si (114) surfaces by using an external magnetic field
JournalJournal of Applied Physics
AuthorsMolina, J.Author
De La Hidalga, J.Author
Gutierrez, E.Author
Year2014 (August 14)Volume116
Issue6
PublisherAIP Publishing
DOIdoi:10.1063/1.4892891Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5200203Long-form Identifiermindat:1:5:5200203:8
GUID0
Full ReferenceMolina, J., De La Hidalga, J., Gutierrez, E. (2014) Reduction in the interface-states density of metal-oxide-semiconductor field-effect transistors fabricated on high-index Si (114) surfaces by using an external magnetic field. Journal of Applied Physics, 116 (6). 64510pp. doi:10.1063/1.4892891
Plain TextMolina, J., De La Hidalga, J., Gutierrez, E. (2014) Reduction in the interface-states density of metal-oxide-semiconductor field-effect transistors fabricated on high-index Si (114) surfaces by using an external magnetic field. Journal of Applied Physics, 116 (6). 64510pp. doi:10.1063/1.4892891
In(2014, August) Journal of Applied Physics Vol. 116 (6) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

(2009) Role of shallow Si/SiO2 interface states on high frequency channel noise in n-channel metal-oxide-semiconductor field effect transistors. Applied Physics Letters, 95 (12). 123508pp. doi:10.1063/1.3231924
Sano, Eiichi (2003) A Theoretical Comparison of Strained-Si-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors and Conventional Si-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors Using a Drift-Diffusion-Based Simulator. Japanese Journal of Applied Physics, 42. 6346-6353 doi:10.1143/jjap.42.6346
Yokoyama, Masafumi, Yokoyama, Haruki, Takenaka, Mitsuru, Takagi, Shinichi (2019) InGaSb-on-insulator p-channel metal-oxide-semiconductor field-effect transistors on Si fabricated by direct wafer bonding. Journal of Applied Physics, 125 (11). 114501pp. doi:10.1063/1.5049518
Stahlbush, R. E., Edwards, A. H., Griscom, D. L., Mrstik, B. J. (1993) Post‐irradiation cracking of H2and formation of interface states in irradiated metal‐oxide‐semiconductor field‐effect transistors. Journal of Applied Physics, 73 (2). 658-667 doi:10.1063/1.353348
Ortiz, G., Strenger, C., Uhnevionak, V., Burenkov, A., Bauer, A. J., Pichler, P., Cristiano, F., Bedel-Pereira, E., Mortet, V. (2015) Impact of acceptor concentration on electrical properties and density of interface states of 4H-SiC n-metal-oxide-semiconductor field effect transistors studied by Hall effect. Applied Physics Letters, 106 (6). 62104pp. doi:10.1063/1.4908123
Brown, G. J. (2014) Passivation of GaSb using molecular beam epitaxy Y2O3 to achieve low interfacial trap density and high-performance self-aligned inversion-channel p-metal-oxide-semiconductor field-effect-transistors. Applied Physics Letters, 105 (18). 182106pp. doi:10.1063/1.4901100
Takahashi, Tsunaki, Kodera, Tetsuo, Oda, Shunri, Uchida, Ken (2011) Experimental study on subband structures and hole transport in (110) Si p-type metal-oxide-semiconductor field-effect transistors under high magnetic field. Journal of Applied Physics, 109 (3). 34505pp. doi:10.1063/1.3543990
Yoshioka, Hironori, Morioka, Naoya, Suda, Jun, Kimoto, Tsunenobu (2011) Bandgap shift by quantum confinement effect in 〈100〉 Si-nanowires derived from threshold-voltage shift of fabricated metal-oxide-semiconductor field effect transistors and theoretical calculations. Journal of Applied Physics, 109 (6). 64312pp. doi:10.1063/1.3559265
Nishi, K., Yokoyama, M., Yokoyama, H., Hoshi, T., Sugiyama, H., Takenaka, M., Takagi, S. (2014) Operation of the GaSb p-channel metal-oxide-semiconductor field-effect transistors fabricated on (111)A surfaces. Applied Physics Letters, 105 (23). 233503pp. doi:10.1063/1.4903837
Pribicko, T. G., Campbell, J. P., Lenahan, P. M., Tsai, W., Kerber, A. (2005) Interface defects in Si∕HfO2-based metal-oxide-semiconductor field-effect transistors. Applied Physics Letters, 86 (17). 173511pp. doi:10.1063/1.1919397
Casterman, D., De Souza, M. M. (2010) Evaluation of the Coulomb-limited mobility in high-Îș dielectric metal oxide semiconductor field effect transistors. Journal of Applied Physics, 107 (6). 63706pp. doi:10.1063/1.3319558
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: August 20, 2025 08:47:11
Go to top of page