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Demin, V. A., Erokhin, V. V., Kashkarov, P. K., Kovalchuk, M. V. (2014) Electrochemical model of the polyaniline based organic memristive device. Journal of Applied Physics, 116 (6). 64507pp. doi:10.1063/1.4893022

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Reference TypeJournal (article/letter/editorial)
TitleElectrochemical model of the polyaniline based organic memristive device
JournalJournal of Applied Physics
AuthorsDemin, V. A.Author
Erokhin, V. V.Author
Kashkarov, P. K.Author
Kovalchuk, M. V.Author
Year2014 (August 14)Volume116
Issue6
PublisherAIP Publishing
DOIdoi:10.1063/1.4893022Search in ResearchGate
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Mindat Ref. ID5200218Long-form Identifiermindat:1:5:5200218:0
GUID0
Full ReferenceDemin, V. A., Erokhin, V. V., Kashkarov, P. K., Kovalchuk, M. V. (2014) Electrochemical model of the polyaniline based organic memristive device. Journal of Applied Physics, 116 (6). 64507pp. doi:10.1063/1.4893022
Plain TextDemin, V. A., Erokhin, V. V., Kashkarov, P. K., Kovalchuk, M. V. (2014) Electrochemical model of the polyaniline based organic memristive device. Journal of Applied Physics, 116 (6). 64507pp. doi:10.1063/1.4893022
In(2014, August) Journal of Applied Physics Vol. 116 (6) AIP Publishing

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Lapkin, D. A., Emelyanov, A. V., Demin, V. A., Erokhin, V. V., Feigin, L. A., Kashkarov, P. K., Kovalchuk, M. V. (2018) Polyaniline-based memristive microdevice with high switching rate and endurance. Applied Physics Letters, 112 (4). 43302pp. doi:10.1063/1.5013929
Demin, V. A., Emelyanov, A. V., Lapkin, D. A., Erokhin, V. V., Kashkarov, P. K., Kovalchuk, M. V. (2016) Neuromorphic elements and systems as the basis for the physical implementation of artificial intelligence technologies. Crystallography Reports, 61 (6) 992-1001 doi:10.1134/s1063774516060067
Prudnikov, Nikita V, Lapkin, Dmitry A, Emelyanov, Andrey V, Minnekhanov, Anton A, Malakhova, Yulia N, Chvalun, Sergey N, Demin, Vyacheslav A, Erokhin, Victor V (2020) Associative STDP-like learning of neuromorphic circuits based on polyaniline memristive microdevices. Journal of Physics D: Applied Physics, 53 (41) 414001pp. doi:10.1088/1361-6463/ab9262
Tselikov, G. I., Emelyanov, A. V., Antropov, I. M., Demin, V. A., Kashkarov, P. K. (2015) Effect of TiOx/TiO2layer thickness on the properties of the pulsed laser deposited memristive device. physica status solidi (c), 12 (1). 229-232 doi:10.1002/pssc.201400123
Matsukatova, Anna N., Emelyanov, Andrey V., Minnekhanov, Anton A., Nesmelov, Aleksandr A., Vdovichenko, Artem Yu., Chvalun, Sergey N., Rylkov, Vladimir V., Forsh, Pavel A., Demin, Viacheslav A., Kashkarov, Pavel K., Kovalchuk, Mikhail V. (2020) Resistive switching kinetics and second-order effects in parylene-based memristors. Applied Physics Letters, 117 (24) 243501pp. doi:10.1063/5.0030069
Lapkin, D. A., Malakhov, S. N., Demin, V. A., Chvalun, S. N. (2017) An Organic Memristive Element Based on Single Polyaniline/Polyamide-6 Fiber. Technical Physics Letters, 43. 1102-1104 doi:10.1134/s1063785017120227
Nikiruy, K. E., Emelyanov, A. V., Demin, V. A., Rylkov, V. V., Sitnikov, A. V., Kashkarov, P. K. (2018) A Precise Algorithm of Memristor Switching to a State with Preset Resistance. Technical Physics Letters, 44. 416-419 doi:10.1134/s106378501805022x
Minnekhanov, A A, Shvetsov, B S, Emelyanov, A V, Chernoglazov, K Yu, Kukueva, E V, Nesmelov, A A, Grishchenko, Yu V, Zanaveskin, M L, Rylkov, V V, Demin, V A (2021) Parylene-based memristive synapses for hardware neural networks capable of dopamine-modulated STDP learning. Journal of Physics D: Applied Physics, 54 (48) 484002pp. doi:10.1088/1361-6463/ac203c
Nikiruy, K. E., Emelyanov, A. V., Rylkov, V. V., Sitnikov, A. V., Demin, V. A. (2019) Adaptive Properties of Spiking Neuromorphic Networks with Synapses Based on Memristive Elements. Technical Physics Letters, 45. 386-390 doi:10.1134/s1063785019040278
Allodi, Valentina, Erokhin, Victor, Fontana, M. P. (2010) Effect of temperature on the electrical properties of an organic memristive device. Journal of Applied Physics, 108 (7). 74510pp. doi:10.1063/1.3484038
Emel’yanov, A. V., Demin, V. A., Antropov, I. M., Tselikov, G. I., Lavrukhina, Z. V., Kashkarov, P. K. (2015) Effect of the thickness of the TiO x /TiO2 layers on their memristor properties. Technical Physics, 60 (1). 112-115 doi:10.1134/s1063784215010077
 
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