Baker-Finch, Simeon C., McIntosh, Keith R., Yan, Di, Fong, Kean Chern, Kho, Teng C. (2014) Near-infrared free carrier absorption in heavily doped silicon. Journal of Applied Physics, 116 (6). 63106pp. doi:10.1063/1.4893176

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Reference Type	Journal (article/letter/editorial)
Title	Near-infrared free carrier absorption in heavily doped silicon
Journal	Journal of Applied Physics
Authors	Baker-Finch, Simeon C.		Author
	McIntosh, Keith R.		Author
	Yan, Di		Author
	Fong, Kean Chern		Author
	Kho, Teng C.		Author
Year	2014 (August 14)	Volume	116
Issue	6
Publisher	AIP Publishing
DOI	doi:10.1063/1.4893176Search in ResearchGate
	Generate Citation Formats
Mindat Ref. ID	5200221	Long-form Identifier	mindat:1:5:5200221:4
GUID	0
Full Reference	Baker-Finch, Simeon C., McIntosh, Keith R., Yan, Di, Fong, Kean Chern, Kho, Teng C. (2014) Near-infrared free carrier absorption in heavily doped silicon. Journal of Applied Physics, 116 (6). 63106pp. doi:10.1063/1.4893176
Plain Text	Baker-Finch, Simeon C., McIntosh, Keith R., Yan, Di, Fong, Kean Chern, Kho, Teng C. (2014) Near-infrared free carrier absorption in heavily doped silicon. Journal of Applied Physics, 116 (6). 63106pp. doi:10.1063/1.4893176
In	(2014, August) Journal of Applied Physics Vol. 116 (6) AIP Publishing

	Kho, Teng C., Baker-Finch, Simeon C., McIntosh, Keith R. (2011) The study of thermal silicon dioxide electrets formed by corona discharge and rapid-thermal annealing. Journal of Applied Physics, 109 (5). 53108pp. doi:10.1063/1.3559260
	Tong, Jingnan, Le, Tien T., Liang, Wensheng, Hossain, Md. Anower, McIntosh, Keith R., Narangari, Parvathala, Armand, Stephane, Kho, Teng C., Khoo, Kean T., Zakaria, Yahya, Abdallah, Amir A., Surve, Sachin, Ernst, Marco, Hoex, Bram, Fong, Kean Chern (2021) Impact of Pregrown SiO_x on the Carrier Selectivity and Thermal Stability of Molybdenum-Oxide-Passivated Contact for Si Solar Cells. ACS Applied Materials & Interfaces, 13 (30) 36426-36435 doi:10.1021/acsami.1c06765
	Yu, Honghao, Xiong, Qing, Wang, Hong, Zhang, Ye, Wang, Yi, Lai, Jianjun, Chen, Changhong (2020) Near-infrared free carrier absorption enhancement of heavily doped silicon in all-dielectric metasurface. Applied Physics Letters, 117 (13) 134101pp. doi:10.1063/5.0023151
	*Isenberg, Joerg, Warta, Wilhelm (2004) Free carrier absorption in heavily doped silicon layers. Applied Physics Letters, 84 (13). 2265-2267 doi:10.1063/1.1690105*
	Jain, S. C., Nathan, A., Briglio, D. R., Roulston, D. J., Selvakumar, C. R., Yang, T. (1991) Band‐to‐band and free‐carrier absorption coefficients in heavily doped silicon at 4 K and at room temperature. Journal of Applied Physics, 69 (6). 3687-3690 doi:10.1063/1.348485
	*Yan, Di, Cuevas, Andres (2014) Empirical determination of the energy band gap narrowing in p+silicon heavily doped with boron. Journal of Applied Physics, 116 (19). 194505pp. doi:10.1063/1.4902066*
	Nguyen, Hieu T., Baker-Finch, Simeon C., Macdonald, Daniel (2014) Temperature dependence of the radiative recombination coefficient in crystalline silicon from spectral photoluminescence. Applied Physics Letters, 104 (11). 112105pp. doi:10.1063/1.4869295
	McIntosh, Keith R., Baker-Finch, Simeon C., Grant, Nicholas E., Thomson, Andrew F., Singh, Sonita, Baikie, Iain D. (2009) Charge Density in Atmospheric Pressure Chemical Vapor Deposition TiO[sub 2] on SiO[sub 2]-Passivated Silicon. Journal of the Electrochemical Society, 156. doi:10.1149/1.3216029
	*McIntosh, Keith R., Black, Lachlan E. (2014) On effective surface recombination parameters. Journal of Applied Physics, 116 (1). 14503pp. doi:10.1063/1.4886595*
	*Selvakumar, C. R. (1984) Simple general analytical solution to the minority carrier transport in heavily doped semiconductors. Journal of Applied Physics, 56 (12). 3476-3478 doi:10.1063/1.333898*
	Paudyal, Bijaya B., McIntosh, Keith R., Macdonald, Daniel H., Coletti, Gianluca (2010) Temperature dependent carrier lifetime studies of Mo in crystalline silicon. Journal of Applied Physics, 107 (5). 54511pp. doi:10.1063/1.3309833

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Baker-Finch, Simeon C., McIntosh, Keith R., Yan, Di, Fong, Kean Chern, Kho, Teng C. (2014) Near-infrared free carrier absorption in heavily doped silicon. Journal of Applied Physics, 116 (6). 63106pp. doi:10.1063/1.4893176

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