Reference Type | Journal (article/letter/editorial) |
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Title | Cu(In,Ga)Se2 absorber thinning and the homo-interface model: Influence of Mo back contact and 3-stage process on device characteristics |
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Journal | Journal of Applied Physics |
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Authors | Leonard, E. | Author |
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Arzel, L. | Author |
Tomassini, M. | Author |
Zabierowski, P. | Author |
Fuertes Marrón, D. | Author |
Barreau, N. | Author |
Year | 2014 (August 21) | Volume | 116 |
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Issue | 7 |
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Publisher | AIP Publishing |
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DOI | doi:10.1063/1.4891478Search in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 5200233 | Long-form Identifier | mindat:1:5:5200233:9 |
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GUID | 0 |
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Full Reference | Leonard, E., Arzel, L., Tomassini, M., Zabierowski, P., Fuertes Marrón, D., Barreau, N. (2014) Cu(In,Ga)Se2 absorber thinning and the homo-interface model: Influence of Mo back contact and 3-stage process on device characteristics. Journal of Applied Physics, 116 (7). 74512pp. doi:10.1063/1.4891478 |
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Plain Text | Leonard, E., Arzel, L., Tomassini, M., Zabierowski, P., Fuertes Marrón, D., Barreau, N. (2014) Cu(In,Ga)Se2 absorber thinning and the homo-interface model: Influence of Mo back contact and 3-stage process on device characteristics. Journal of Applied Physics, 116 (7). 74512pp. doi:10.1063/1.4891478 |
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In | (2014, August) Journal of Applied Physics Vol. 116 (7) AIP Publishing |
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