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Sprogies, J., Scheinert, S., Hörselmann, I. (2014) Analyzing the influence of negative gate bias stress on the transconductance of solution-processed, organic thin-film transistors. Journal of Applied Physics, 116 (7). 74507pp. doi:10.1063/1.4893317

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Reference TypeJournal (article/letter/editorial)
TitleAnalyzing the influence of negative gate bias stress on the transconductance of solution-processed, organic thin-film transistors
JournalJournal of Applied Physics
AuthorsSprogies, J.Author
Scheinert, S.Author
Hörselmann, I.Author
Year2014 (August 21)Volume116
Issue7
PublisherAIP Publishing
DOIdoi:10.1063/1.4893317Search in ResearchGate
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Mindat Ref. ID5200260Long-form Identifiermindat:1:5:5200260:3
GUID0
Full ReferenceSprogies, J., Scheinert, S., Hörselmann, I. (2014) Analyzing the influence of negative gate bias stress on the transconductance of solution-processed, organic thin-film transistors. Journal of Applied Physics, 116 (7). 74507pp. doi:10.1063/1.4893317
Plain TextSprogies, J., Scheinert, S., Hörselmann, I. (2014) Analyzing the influence of negative gate bias stress on the transconductance of solution-processed, organic thin-film transistors. Journal of Applied Physics, 116 (7). 74507pp. doi:10.1063/1.4893317
In(2014, August) Journal of Applied Physics Vol. 116 (7) AIP Publishing

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