| Reference Type | Journal (article/letter/editorial) |
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| Title | Field effect in the quantum Hall regime of a high mobility graphene wire |
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| Journal | Journal of Applied Physics |
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| Authors | Barraud, C. | Author |
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| Choi, T. | Author |
| Butti, P. | Author |
| Shorubalko, I. | Author |
| Taniguchi, T. | Author |
| Watanabe, K. | Author |
| Ihn, T. | Author |
| Ensslin, K. | Author |
| Year | 2014 (August 21) | Volume | 116 |
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| Issue | 7 |
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| Publisher | AIP Publishing |
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| DOI | doi:10.1063/1.4893468Search in ResearchGate |
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| Generate Citation Formats |
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| Mindat Ref. ID | 5200276 | Long-form Identifier | mindat:1:5:5200276:4 |
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| GUID | 0 |
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| Full Reference | Barraud, C., Choi, T., Butti, P., Shorubalko, I., Taniguchi, T., Watanabe, K., Ihn, T., Ensslin, K. (2014) Field effect in the quantum Hall regime of a high mobility graphene wire. Journal of Applied Physics, 116 (7). 73705pp. doi:10.1063/1.4893468 |
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| Plain Text | Barraud, C., Choi, T., Butti, P., Shorubalko, I., Taniguchi, T., Watanabe, K., Ihn, T., Ensslin, K. (2014) Field effect in the quantum Hall regime of a high mobility graphene wire. Journal of Applied Physics, 116 (7). 73705pp. doi:10.1063/1.4893468 |
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| In | (2014, August) Journal of Applied Physics Vol. 116 (7) AIP Publishing |
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