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Chen, Haoran, Yang, Lin'an, Hao, Yue (2014) Influence of InGaN sub-quantum-well on performance of InAlN/GaN/InAlN resonant tunneling diodes. Journal of Applied Physics, 116 (7). 74510pp. doi:10.1063/1.4893561

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Reference TypeJournal (article/letter/editorial)
TitleInfluence of InGaN sub-quantum-well on performance of InAlN/GaN/InAlN resonant tunneling diodes
JournalJournal of Applied Physics
AuthorsChen, HaoranAuthor
Yang, Lin'anAuthor
Hao, YueAuthor
Year2014 (August 21)Volume116
Issue7
PublisherAIP Publishing
DOIdoi:10.1063/1.4893561Search in ResearchGate
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Mindat Ref. ID5200288Long-form Identifiermindat:1:5:5200288:9
GUID0
Full ReferenceChen, Haoran, Yang, Lin'an, Hao, Yue (2014) Influence of InGaN sub-quantum-well on performance of InAlN/GaN/InAlN resonant tunneling diodes. Journal of Applied Physics, 116 (7). 74510pp. doi:10.1063/1.4893561
Plain TextChen, Haoran, Yang, Lin'an, Hao, Yue (2014) Influence of InGaN sub-quantum-well on performance of InAlN/GaN/InAlN resonant tunneling diodes. Journal of Applied Physics, 116 (7). 74510pp. doi:10.1063/1.4893561
In(2014, August) Journal of Applied Physics Vol. 116 (7) AIP Publishing

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Yang, Lin'an, Li, Yue, Wang, Ying, Xu, Shengrui, Hao, Yue (2016) Asymmetric quantum-well structures for AlGaN/GaN/AlGaN resonant tunneling diodes. Journal of Applied Physics, 119 (16). 164501pp. doi:10.1063/1.4948331
Chen, Haoran, Yang, Lin'an, Long, Shuang, Hao, Yue (2013) Reproducibility in the negative differential resistance characteristic of In0.17Al0.83N/GaN resonant tunneling diodes—Theoretical investigation. Journal of Applied Physics, 113 (19). 194509pp. doi:10.1063/1.4804414
Zhang, Yachao, Wang, Zhizhe, Xu, Shengrui, Chen, Dazheng, Bao, Weimin, Zhang, Jinfeng, Zhang, Jincheng, Hao, Yue (2017) Studies on the InAlN/InGaN/InAlN/InGaN double channel heterostructures with low sheet resistance. Applied Physics Letters, 111 (22). 222107pp. doi:10.1063/1.4994656
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Rong, Taotao, Yang, Lin-An, Zhao, Ziyue, Yang, Lin, Hao, Yue (2018) Performance of resonant tunneling diodes based on the nonpolar-oriented AlGaN/GaN heterostructures. Japanese Journal of Applied Physics, 57 (7) 70303 doi:10.7567/jjap.57.070303
Xue, JunShuai, Zhang, JinCheng, Hou, YaoWei, Zhou, Hao, Zhang, JinFeng, Hao, Yue (2012) Pulsed metal organic chemical vapor deposition of nearly latticed-matched InAlN/GaN/InAlN/GaN double-channel high electron mobility transistors. Applied Physics Letters, 100 (1). 13507pp. doi:10.1063/1.3675453
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Fireman, M. N., Li, Haoran, Keller, Stacia, Mishra, Umesh K., Speck, James S. (2017) Vertical transport in isotype InAlN/GaN dipole induced diodes grown by molecular beam epitaxy. Journal of Applied Physics, 121 (20). 205702pp. doi:10.1063/1.4983767
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