Watch the Dallas Symposium LIVE, and fundraiser auction
Ticket proceeds support mindat.org! - click here...
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Thu Trang Nghiêm, T., Saint-Martin, J., Dollfus, P. (2014) New insights into self-heating in double-gate transistors by solving Boltzmann transport equations. Journal of Applied Physics, 116 (7). 74514pp. doi:10.1063/1.4893646

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleNew insights into self-heating in double-gate transistors by solving Boltzmann transport equations
JournalJournal of Applied Physics
AuthorsThu Trang Nghiêm, T.Author
Saint-Martin, J.Author
Dollfus, P.Author
Year2014 (August 21)Volume116
Issue7
PublisherAIP Publishing
DOIdoi:10.1063/1.4893646Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5200298Long-form Identifiermindat:1:5:5200298:6
GUID0
Full ReferenceThu Trang Nghiêm, T., Saint-Martin, J., Dollfus, P. (2014) New insights into self-heating in double-gate transistors by solving Boltzmann transport equations. Journal of Applied Physics, 116 (7). 74514pp. doi:10.1063/1.4893646
Plain TextThu Trang Nghiêm, T., Saint-Martin, J., Dollfus, P. (2014) New insights into self-heating in double-gate transistors by solving Boltzmann transport equations. Journal of Applied Physics, 116 (7). 74514pp. doi:10.1063/1.4893646
In(2014, August) Journal of Applied Physics Vol. 116 (7) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Do, V. Nam, Dollfus, P. (2007) Oscillation of gate leakage current in double-gate metal-oxide-semiconductor field-effect transistors. Journal of Applied Physics, 101 (7). 73709pp. doi:10.1063/1.2716874
NGHIÊM, T. T. TRANG, AUBRY-FORTUNA, V., CHASSAT, C., BOSSEBOEUF, A., DOLLFUS, P. (2011) MONTE CARLO SIMULATION OF GIANT PIEZORESISTANCE EFFECT IN p-TYPE SILICON NANOSTRUCTURES. Modern Physics Letters B, 25. 995-1001 doi:10.1142/s0217984911026711
Hung Nguyen, V., Nguyen, M. Chung, Nguyen, Huy-Viet, Saint-Martin, J., Dollfus, P. (2014) Enhanced thermoelectric figure of merit in vertical graphene junctions. Applied Physics Letters, 105 (13). 133105pp. doi:10.1063/1.4896915
Bigelow, Jeffrey M., Leburton, J.‐P. (1994) Self‐consistent simulation of quantum transport in dual‐gate field‐effect transistors. Journal of Applied Physics, 76 (5). 2887-2892 doi:10.1063/1.357526
Tran, Van-Truong, Saint-Martin, Jérôme, Dollfus, Philippe (2014) Large on/off current ratio in hybrid graphene/BN nanoribbons by transverse electric field-induced control of bandgap. Applied Physics Letters, 105 (7). 73114pp. doi:10.1063/1.4893697
Cassan, E., Galdin, S., Dollfus, P., Hesto, P. (1999) Study of direct tunneling through ultrathin gate oxide of field effect transistors using Monte Carlo simulation. Journal of Applied Physics, 86 (7). 3804-3811 doi:10.1063/1.371291
Cavassilas, Nicolas, Michelini, Fabienne, Bescond, Marc (2011) Multiband quantum transport simulations of ultimate p-type double-gate transistors: Effects of hole-phonon scattering. Journal of Applied Physics, 109 (7). 73706pp. doi:10.1063/1.3556457
Trang Nghiêm, T. T., Chapuis, Pierre-Olivier (2016) Phononic thermal resistance due to a finite periodic array of nano-scatterers. Journal of Applied Physics, 120 (4). 44305pp. doi:10.1063/1.4959803
Mazzamuto, F., Saint-Martin, J., Valentin, A., Chassat, C., Dollfus, P. (2011) Edge shape effect on vibrational modes in graphene nanoribbons: A numerical study. Journal of Applied Physics, 109 (6). 64516pp. doi:10.1063/1.3552293
Hung Nguyen, V., Mazzamuto, F., Saint-Martin, J., Bournel, A., Dollfus, P. (2011) Giant effect of negative differential conductance in graphene nanoribbon p-n hetero-junctions. Applied Physics Letters, 99 (4). 42105pp. doi:10.1063/1.3616143
Dollfus, P., Bru, C., Hesto, P. (1993) Monte Carlo simulation of pseudomorphic InGaAs/GaAs high electron mobility transistors: Physical limitations at ultrashort gate length. Journal of Applied Physics, 73 (2). 804-812 doi:10.1063/1.353341
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: August 20, 2025 02:21:19
Go to top of page