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Ramírez, J. M., Cueff, S., Berencén, Y., Labbé, C., Garrido, B. (2014) Role of silicon excess in Er-doped silicon-rich nitride light emitting devices at 1.54 μm. Journal of Applied Physics, 116 (8). 83103pp. doi:10.1063/1.4893706

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Reference TypeJournal (article/letter/editorial)
TitleRole of silicon excess in Er-doped silicon-rich nitride light emitting devices at 1.54 μm
JournalJournal of Applied Physics
AuthorsRamírez, J. M.Author
Cueff, S.Author
Berencén, Y.Author
Labbé, C.Author
Garrido, B.Author
Year2014 (August 28)Volume116
Issue8
PublisherAIP Publishing
DOIdoi:10.1063/1.4893706Search in ResearchGate
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Mindat Ref. ID5200325Long-form Identifiermindat:1:5:5200325:9
GUID0
Full ReferenceRamírez, J. M., Cueff, S., Berencén, Y., Labbé, C., Garrido, B. (2014) Role of silicon excess in Er-doped silicon-rich nitride light emitting devices at 1.54 μm. Journal of Applied Physics, 116 (8). 83103pp. doi:10.1063/1.4893706
Plain TextRamírez, J. M., Cueff, S., Berencén, Y., Labbé, C., Garrido, B. (2014) Role of silicon excess in Er-doped silicon-rich nitride light emitting devices at 1.54 μm. Journal of Applied Physics, 116 (8). 83103pp. doi:10.1063/1.4893706
In(2014, August) Journal of Applied Physics Vol. 116 (8) AIP Publishing

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