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Sintonen, Sakari, Rudziński, Mariusz, Suihkonen, Sami, Jussila, Henri, Knetzger, Michael, Meissner, Elke, Danilewsky, Andreas, Tuomi, Turkka O., Lipsanen, Harri (2014) Synchrotron radiation x-ray topography and defect selective etching analysis of threading dislocations in GaN. Journal of Applied Physics, 116 (8). 83504pp. doi:10.1063/1.4893901

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Reference TypeJournal (article/letter/editorial)
TitleSynchrotron radiation x-ray topography and defect selective etching analysis of threading dislocations in GaN
JournalJournal of Applied Physics
AuthorsSintonen, SakariAuthor
Rudziński, MariuszAuthor
Suihkonen, SamiAuthor
Jussila, HenriAuthor
Knetzger, MichaelAuthor
Meissner, ElkeAuthor
Danilewsky, AndreasAuthor
Tuomi, Turkka O.Author
Lipsanen, HarriAuthor
Year2014 (August 28)Volume116
Issue8
PublisherAIP Publishing
DOIdoi:10.1063/1.4893901Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5200345Long-form Identifiermindat:1:5:5200345:3
GUID0
Full ReferenceSintonen, Sakari, Rudziński, Mariusz, Suihkonen, Sami, Jussila, Henri, Knetzger, Michael, Meissner, Elke, Danilewsky, Andreas, Tuomi, Turkka O., Lipsanen, Harri (2014) Synchrotron radiation x-ray topography and defect selective etching analysis of threading dislocations in GaN. Journal of Applied Physics, 116 (8). 83504pp. doi:10.1063/1.4893901
Plain TextSintonen, Sakari, Rudziński, Mariusz, Suihkonen, Sami, Jussila, Henri, Knetzger, Michael, Meissner, Elke, Danilewsky, Andreas, Tuomi, Turkka O., Lipsanen, Harri (2014) Synchrotron radiation x-ray topography and defect selective etching analysis of threading dislocations in GaN. Journal of Applied Physics, 116 (8). 83504pp. doi:10.1063/1.4893901
In(2014, August) Journal of Applied Physics Vol. 116 (8) AIP Publishing

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