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Akhavan, N. D., Jolley, G., Umana-Membreno, G. A., Antoszewski, J., Faraone, L. (2014) Thin film three-dimensional topological insulator metal-oxide-semiconductor field-effect-transistors: A candidate for sub-10 nm devices. Journal of Applied Physics, 116 (8). 84508pp. doi:10.1063/1.4894152

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Reference TypeJournal (article/letter/editorial)
TitleThin film three-dimensional topological insulator metal-oxide-semiconductor field-effect-transistors: A candidate for sub-10 nm devices
JournalJournal of Applied Physics
AuthorsAkhavan, N. D.Author
Jolley, G.Author
Umana-Membreno, G. A.Author
Antoszewski, J.Author
Faraone, L.Author
Year2014 (August 28)Volume116
Issue8
PublisherAIP Publishing
DOIdoi:10.1063/1.4894152Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5200371Long-form Identifiermindat:1:5:5200371:8
GUID0
Full ReferenceAkhavan, N. D., Jolley, G., Umana-Membreno, G. A., Antoszewski, J., Faraone, L. (2014) Thin film three-dimensional topological insulator metal-oxide-semiconductor field-effect-transistors: A candidate for sub-10 nm devices. Journal of Applied Physics, 116 (8). 84508pp. doi:10.1063/1.4894152
Plain TextAkhavan, N. D., Jolley, G., Umana-Membreno, G. A., Antoszewski, J., Faraone, L. (2014) Thin film three-dimensional topological insulator metal-oxide-semiconductor field-effect-transistors: A candidate for sub-10 nm devices. Journal of Applied Physics, 116 (8). 84508pp. doi:10.1063/1.4894152
In(2014, August) Journal of Applied Physics Vol. 116 (8) AIP Publishing

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