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Jansson, F., Wiemer, M., Nenashev, A. V., Petznick, S., Klar, P. J., Hetterich, M., Gebhard, F., Baranovskii, S. D. (2014) Large positive magnetoresistance effects in the dilute magnetic semiconductor (Zn,Mn)Se in the regime of electron hopping. Journal of Applied Physics, 116 (8). 83710pp. doi:10.1063/1.4894236

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Reference TypeJournal (article/letter/editorial)
TitleLarge positive magnetoresistance effects in the dilute magnetic semiconductor (Zn,Mn)Se in the regime of electron hopping
JournalJournal of Applied Physics
AuthorsJansson, F.Author
Wiemer, M.Author
Nenashev, A. V.Author
Petznick, S.Author
Klar, P. J.Author
Hetterich, M.Author
Gebhard, F.Author
Baranovskii, S. D.Author
Year2014 (August 28)Volume116
Issue8
PublisherAIP Publishing
DOIdoi:10.1063/1.4894236Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5200381Long-form Identifiermindat:1:5:5200381:5
GUID0
Full ReferenceJansson, F., Wiemer, M., Nenashev, A. V., Petznick, S., Klar, P. J., Hetterich, M., Gebhard, F., Baranovskii, S. D. (2014) Large positive magnetoresistance effects in the dilute magnetic semiconductor (Zn,Mn)Se in the regime of electron hopping. Journal of Applied Physics, 116 (8). 83710pp. doi:10.1063/1.4894236
Plain TextJansson, F., Wiemer, M., Nenashev, A. V., Petznick, S., Klar, P. J., Hetterich, M., Gebhard, F., Baranovskii, S. D. (2014) Large positive magnetoresistance effects in the dilute magnetic semiconductor (Zn,Mn)Se in the regime of electron hopping. Journal of Applied Physics, 116 (8). 83710pp. doi:10.1063/1.4894236
In(2014, August) Journal of Applied Physics Vol. 116 (8) AIP Publishing


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