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Jakomin, R., Kawabata, R. M. S., Mourão, R. T., Micha, D. N., Pires, M. P., Xie, H., Fischer, A. M., Ponce, F. A., Souza, P. L. (2014) InAs quantum dot growth on AlxGa1−xAs by metalorganic vapor phase epitaxy for intermediate band solar cells. Journal of Applied Physics, 116 (9). 93511pp. doi:10.1063/1.4894295

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Reference TypeJournal (article/letter/editorial)
TitleInAs quantum dot growth on AlxGa1−xAs by metalorganic vapor phase epitaxy for intermediate band solar cells
JournalJournal of Applied Physics
AuthorsJakomin, R.Author
Kawabata, R. M. S.Author
Mourão, R. T.Author
Micha, D. N.Author
Pires, M. P.Author
Xie, H.Author
Fischer, A. M.Author
Ponce, F. A.Author
Souza, P. L.Author
Year2014 (September 7)Volume116
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.4894295Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5200413Long-form Identifiermindat:1:5:5200413:3
GUID0
Full ReferenceJakomin, R., Kawabata, R. M. S., Mourão, R. T., Micha, D. N., Pires, M. P., Xie, H., Fischer, A. M., Ponce, F. A., Souza, P. L. (2014) InAs quantum dot growth on AlxGa1−xAs by metalorganic vapor phase epitaxy for intermediate band solar cells. Journal of Applied Physics, 116 (9). 93511pp. doi:10.1063/1.4894295
Plain TextJakomin, R., Kawabata, R. M. S., Mourão, R. T., Micha, D. N., Pires, M. P., Xie, H., Fischer, A. M., Ponce, F. A., Souza, P. L. (2014) InAs quantum dot growth on AlxGa1−xAs by metalorganic vapor phase epitaxy for intermediate band solar cells. Journal of Applied Physics, 116 (9). 93511pp. doi:10.1063/1.4894295
In(2014, September) Journal of Applied Physics Vol. 116 (9) AIP Publishing

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Xie, H., Prioli, R., Fischer, A. M., Ponce, F. A., Kawabata, R. M. S., Pinto, L. D., Jakomin, R., Pires, M. P., Souza, P. L. (2016) Improved optical properties of InAs quantum dots for intermediate band solar cells by suppression of misfit strain relaxation. Journal of Applied Physics, 120 (3). 34301pp. doi:10.1063/1.4958871
Weiner, E C, Jakomin, R, Kawabata, R M S, Pinto, L D, Archanjo, B S, Pires, M P, Souza, P L (2024) Panning ideal In(Ga)As(P)/InGaP quantum dot structures for intermediate band solar cells. Journal of Physics D: Applied Physics, 57 (8) 85102 doi:10.1088/1361-6463/ad0d2f
Su, P.-Y., Liu, H., Kawabata, R. M. S., Weiner, E. C., Jakomin, R., Pires, M. P., King, R. R., Souza, P. L., Ponce, F. A. (2019) Effect of InAs quantum dots capped with GaAs on atomic-scale ordering in Ga0.5In0.5P. Journal of Applied Physics, 125 (5). 53104pp. doi:10.1063/1.5063941
Xie, H., Ponce, F. A., Jakomin, R., Pires, M. P., Prioli, R., Souza, P. L. (2015) Strain Relaxation in InAs Quantum Dots and its Suppression by Indium Flushing. Microscopy and Microanalysis, 21. 983-984 doi:10.1017/s1431927615005711
Fonseca-Filho, H. D., Prioli, R., Pires, M. P., Lopes, A. S., Souza, P. L., Ponce, F. A. (2007) Atomic force nanolithography of InP for site control growth of InAs nanostructures. Applied Physics Letters, 90 (1). 13117pp. doi:10.1063/1.2430039
Holonyak, N., Kolbas, R. M., Rezek, E. A., Chin, R., Dupuis, R. D., Dapkus, P. D. (1978) Bandfilling in metalorganic chemical vapor deposited AlxGa1−xAs‐GaAs‐AlxGa1−xAs quantum‐well heterostructure lasers. Journal of Applied Physics, 49 (11). 5392-5397 doi:10.1063/1.324494
Tribuzy, C. V. B., Butendeich, R., Pires, M. P., Souza, P. L., Henriques, A. B. (2001) Carbon delta-doped AlGaAs grown by metalorganic vapor phase epitaxy. Journal of Applied Physics, 90 (3). 1660-1662 doi:10.1063/1.1382826
Fonseca-Filho, H. D., Almeida, C. M., Prioli, R., Pires, M. P., Souza, P. L., Wu, Z. H., Wei, Q. Y., Ponce, F. A. (2010) Growth of linearly ordered arrays of InAs nanocrystals on scratched InP. Journal of Applied Physics, 107 (5). 54313pp. doi:10.1063/1.3309836
Debnath, M. C., Mishima, T. D., Santos, M. B., Cheng, Y., Whiteside, V. R., Sellers, I. R., Hossain, K., Laghumavarapu, R. B., Liang, B. L., Huffaker, D. L. (2016) High-density InAs/GaAs1−xSbx quantum-dot structures grown by molecular beam epitaxy for use in intermediate band solar cells. Journal of Applied Physics, 119 (11). 114301pp. doi:10.1063/1.4943631
Thomeer, R. A. J., Hageman, P. R., Giling, L. J. (1994) Radiatively controlled lifetimes in AlxGa1−xAs grown by metalorganic vapor phase epitaxy. Applied Physics Letters, 64 (12). 1561-1563 doi:10.1063/1.111865
Roth, A. P., Sacilotti, M. A., Masut, R. A., Machado, A., D’Arcy, P. J. (1986) Growth of GaxIn1−xAs by low‐pressure metalorganic vapor‐phase epitaxy. Journal of Applied Physics, 60 (6). 2003-2007 doi:10.1063/1.337201
 
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