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Mooney, P. M., Watkins, K. P., Jiang, Zenan, Basile, A. F., Lewis, R. B., Bahrami-Yekta, V., Masnadi-Shirazi, M., Beaton, D. A., Tiedje, T. (2015) Erratum: “Deep level defects in n-type GaAsBi and GaAs grown at low temperatures” [J. Appl. Phys. 113, 133708 (2013)]. Journal of Applied Physics, 117 (1). 19901pp. doi:10.1063/1.4905390

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Reference TypeJournal (article/letter/editorial)
TitleErratum: “Deep level defects in n-type GaAsBi and GaAs grown at low temperatures” [J. Appl. Phys. 113, 133708 (2013)]
JournalJournal of Applied Physics
AuthorsMooney, P. M.Author
Watkins, K. P.Author
Jiang, ZenanAuthor
Basile, A. F.Author
Lewis, R. B.Author
Bahrami-Yekta, V.Author
Masnadi-Shirazi, M.Author
Beaton, D. A.Author
Tiedje, T.Author
Year2015 (January 7)Volume117
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.4905390Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5200508Long-form Identifiermindat:1:5:5200508:0
GUID0
Full ReferenceMooney, P. M., Watkins, K. P., Jiang, Zenan, Basile, A. F., Lewis, R. B., Bahrami-Yekta, V., Masnadi-Shirazi, M., Beaton, D. A., Tiedje, T. (2015) Erratum: “Deep level defects in n-type GaAsBi and GaAs grown at low temperatures” [J. Appl. Phys. 113, 133708 (2013)]. Journal of Applied Physics, 117 (1). 19901pp. doi:10.1063/1.4905390
Plain TextMooney, P. M., Watkins, K. P., Jiang, Zenan, Basile, A. F., Lewis, R. B., Bahrami-Yekta, V., Masnadi-Shirazi, M., Beaton, D. A., Tiedje, T. (2015) Erratum: “Deep level defects in n-type GaAsBi and GaAs grown at low temperatures” [J. Appl. Phys. 113, 133708 (2013)]. Journal of Applied Physics, 117 (1). 19901pp. doi:10.1063/1.4905390
In(2015, January) Journal of Applied Physics Vol. 117 (1) AIP Publishing

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Mooney, P. M., Watkins, K. P., Jiang, Zenan, Basile, A. F., Lewis, R. B., Bahrami-Yekta, V., Masnadi-Shirazi, M., Beaton, D. A., Tiedje, T. (2013) Deep level defects in n-type GaAsBi and GaAs grown at low temperatures. Journal of Applied Physics, 113 (13). 133708pp. doi:10.1063/1.4798237
Masnadi-Shirazi, M., Lewis, R. B., Bahrami-Yekta, V., Tiedje, T., Chicoine, M., Servati, P. (2014) Bandgap and optical absorption edge of GaAs1−xBix alloys with 0 < x < 17.8%. Journal of Applied Physics, 116 (22). 223506pp. doi:10.1063/1.4904081
Beaudoin, M., Lewis, R.B., Andrews, J.J., Bahrami-Yekta, V., Masnadi-Shirazi, M., O’Leary, S.K., Tiedje, T. (2015) Bandedge optical properties of MBE grown GaAsBi films measured by photoluminescence and photothermal deflection spectroscopy. Journal of Crystal Growth, 425. 245-249 doi:10.1016/j.jcrysgro.2015.01.019
Beaton, D. A., Lewis, R. B., Masnadi-Shirazi, M., Tiedje, T. (2010) Temperature dependence of hole mobility in GaAs1−xBix alloys. Journal of Applied Physics, 108 (8). 83708pp. doi:10.1063/1.3493734
Erol, A., Akalin, E., Kara, K., Aslan, M., Bahrami-Yekta, V., Lewis, R.B., Tiedje, T. (2017) Raman and AFM studies on nominally undoped, p- and n-type GaAsBi alloys. Journal of Alloys and Compounds, 722. 339-343 doi:10.1016/j.jallcom.2017.06.139
Shakfa, M. K., Kalincev, D., Lu, X., Johnson, S. R., Beaton, D. A., Tiedje, T., Chernikov, A., Chatterjee, S., Koch, M. (2013) Quantitative study of localization effects and recombination dynamics in GaAsBi/GaAs single quantum wells. Journal of Applied Physics, 114 (16). 164306pp. doi:10.1063/1.4826621
Lewis, R. B., Masnadi-Shirazi, M., Tiedje, T. (2012) Growth of high Bi concentration GaAs1−xBix by molecular beam epitaxy. Applied Physics Letters, 101 (8). 82112pp. doi:10.1063/1.4748172
Hossain, N., Marko, I. P., Jin, S. R., Hild, K., Sweeney, S. J., Lewis, R. B., Beaton, D. A., Tiedje, T. (2012) Recombination mechanisms and band alignment of GaAs1−xBix/GaAs light emitting diodes. Applied Physics Letters, 100 (5). 51105pp. doi:10.1063/1.3681139
Laine, T., Saarinen, K., Hautojärvi, P., Corbel, C., Missous, M. (1999) Defects in GaAs grown by molecular-beam epitaxy at low temperatures: stoichiometry, doping, and deactivation of n-type conductivity. Journal of Applied Physics, 86 (4). 1888-1897 doi:10.1063/1.370984
Basile, A. F., Rozen, J., Williams, J. R., Feldman, L. C., Mooney, P. M. (2011) Capacitance-voltage and deep-level-transient spectroscopy characterization of defects near SiO2/SiC interfaces. Journal of Applied Physics, 109 (6). 64514pp. doi:10.1063/1.3552303
Heyman, J. N., Stein, J. D., Kaminski, Z. S., Banman, A. R., Massari, A. M., Robinson, J. T. (2015) Erratum: “Carrier heating and negative photoconductivity in graphene” [J. Appl. Phys. 117, 015101 (2015)]. Journal of Applied Physics, 117 (12). 129902pp. doi:10.1063/1.4916801
 
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