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Palumbo, F., Krylov, I., Eizenberg, M. (2015) Comparison of the degradation characteristics of AlON/InGaAs and Al2O3/InGaAs stacks. Journal of Applied Physics, 117 (10). 104103pp. doi:10.1063/1.4914492

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Reference TypeJournal (article/letter/editorial)
TitleComparison of the degradation characteristics of AlON/InGaAs and Al2O3/InGaAs stacks
JournalJournal of Applied Physics
AuthorsPalumbo, F.Author
Krylov, I.Author
Eizenberg, M.Author
Year2015 (March 14)Volume117
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.4914492Search in ResearchGate
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Mindat Ref. ID5200583Long-form Identifiermindat:1:5:5200583:1
GUID0
Full ReferencePalumbo, F., Krylov, I., Eizenberg, M. (2015) Comparison of the degradation characteristics of AlON/InGaAs and Al2O3/InGaAs stacks. Journal of Applied Physics, 117 (10). 104103pp. doi:10.1063/1.4914492
Plain TextPalumbo, F., Krylov, I., Eizenberg, M. (2015) Comparison of the degradation characteristics of AlON/InGaAs and Al2O3/InGaAs stacks. Journal of Applied Physics, 117 (10). 104103pp. doi:10.1063/1.4914492
In(2015, March) Journal of Applied Physics Vol. 117 (10) AIP Publishing

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Palumbo, F., Eizenberg, M. (2014) Degradation characteristics of metal/Al2O3/n-InGaAs capacitors. Journal of Applied Physics, 115 (1). 14106pp. doi:10.1063/1.4861033
Palumbo, F., Shekhter, P., Cohen Weinfeld, K., Eizenberg, M. (2015) Characteristics of the dynamics of breakdown filaments in Al2O3/InGaAs stacks. Applied Physics Letters, 107 (12). 122901pp. doi:10.1063/1.4931496
Palumbo, F., Winter, R., Krylov, I., Eizenberg, M. (2014) Characteristics of stress-induced defects under positive bias in high-k/InGaAs stacks. Applied Physics Letters, 104 (25). 252907pp. doi:10.1063/1.4885535
Shekhter, P., Palumbo, F., Cohen Weinfeld, K., Eizenberg, M. (2014) X ray photoelectron analysis of oxide-semiconductor interface after breakdown in Al2O3/InGaAs stacks. Applied Physics Letters, 105 (10). 102908pp. doi:10.1063/1.4895627
Krylov, Igor, Ritter, Dan, Eizenberg, Moshe (2015) The physical origin of dispersion in accumulation in InGaAs based metal oxide semiconductor gate stacks. Journal of Applied Physics, 117 (17). 174501pp. doi:10.1063/1.4919600
Krylov, Igor, Winter, Roy, Ritter, Dan, Eizenberg, Moshe (2014) Indium out-diffusion in Al2O3/InGaAs stacks during anneal at different ambient conditions. Applied Physics Letters, 104 (24). 243504pp. doi:10.1063/1.4882645
Krylov, Igor, Pokroy, Boaz, Ritter, Dan, Eizenberg, Moshe (2016) A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs. Journal of Applied Physics, 119 (8). 84507pp. doi:10.1063/1.4942657
Krylov, Igor, Ritter, Dan, Eizenberg, Moshe (2015) The dispersion in accumulation at InGaAs-based metal/oxide/semiconductor gate stacks with a bi-layered dielectric structure. Journal of Applied Physics, 118 (8). 84502pp. doi:10.1063/1.4928960
Winter, R., Krylov, I., Cytermann, C., Tang, K., Ahn, J., McIntyre, P. C., Eizenberg, M. (2015) Fermi level pinning in metal/Al2O3/InGaAs gate stack after post metallization annealing. Journal of Applied Physics, 118 (5). 55302pp. doi:10.1063/1.4928158
Palumbo, F., Winter, R., Tang, K., McIntyre, P. C., Eizenberg, M. (2017) Investigation of stress induced interface states in Al2O3/InGaAs metal-oxide-semiconductor capacitors. Journal of Applied Physics, 121 (17). 174105pp. doi:10.1063/1.4982912
Krylov, Igor, Eizenberg, Moshe, Ritter, Dan (2014) Determination of the dielectric constant of InGaAs based gate stacks by a modified thickness series method. Applied Physics Letters, 105 (20). 203506pp. doi:10.1063/1.4902114
 
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