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Zhou, Y. F., Xian, H. M., Wang, B., Yu, Y. J., Wei, Y. D., Wang, J. (2015) Gate controlled electronic transport in monolayer MoS2 field effect transistor. Journal of Applied Physics, 117 (10). 104307pp. doi:10.1063/1.4914954

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Reference TypeJournal (article/letter/editorial)
TitleGate controlled electronic transport in monolayer MoS2 field effect transistor
JournalJournal of Applied Physics
AuthorsZhou, Y. F.Author
Xian, H. M.Author
Wang, B.Author
Yu, Y. J.Author
Wei, Y. D.Author
Wang, J.Author
Year2015 (March 14)Volume117
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.4914954Search in ResearchGate
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Mindat Ref. ID5200606Long-form Identifiermindat:1:5:5200606:1
GUID0
Full ReferenceZhou, Y. F., Xian, H. M., Wang, B., Yu, Y. J., Wei, Y. D., Wang, J. (2015) Gate controlled electronic transport in monolayer MoS2 field effect transistor. Journal of Applied Physics, 117 (10). 104307pp. doi:10.1063/1.4914954
Plain TextZhou, Y. F., Xian, H. M., Wang, B., Yu, Y. J., Wei, Y. D., Wang, J. (2015) Gate controlled electronic transport in monolayer MoS2 field effect transistor. Journal of Applied Physics, 117 (10). 104307pp. doi:10.1063/1.4914954
In(2015, March) Journal of Applied Physics Vol. 117 (10) AIP Publishing

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