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Estreicher, S. K., Gibbons, T. M., Bebek, M. B. (2015) Thermal phonons and defects in semiconductors: The physical reason why defects reduce heat flow, and how to control it. Journal of Applied Physics, 117 (11). 112801pp. doi:10.1063/1.4913826

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Reference TypeJournal (article/letter/editorial)
TitleThermal phonons and defects in semiconductors: The physical reason why defects reduce heat flow, and how to control it
JournalJournal of Applied Physics
AuthorsEstreicher, S. K.Author
Gibbons, T. M.Author
Bebek, M. B.Author
Year2015 (March 21)Volume117
Issue11
PublisherAIP Publishing
DOIdoi:10.1063/1.4913826Search in ResearchGate
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Mindat Ref. ID5200612Long-form Identifiermindat:1:5:5200612:2
GUID0
Full ReferenceEstreicher, S. K., Gibbons, T. M., Bebek, M. B. (2015) Thermal phonons and defects in semiconductors: The physical reason why defects reduce heat flow, and how to control it. Journal of Applied Physics, 117 (11). 112801pp. doi:10.1063/1.4913826
Plain TextEstreicher, S. K., Gibbons, T. M., Bebek, M. B. (2015) Thermal phonons and defects in semiconductors: The physical reason why defects reduce heat flow, and how to control it. Journal of Applied Physics, 117 (11). 112801pp. doi:10.1063/1.4913826
In(2015, March) Journal of Applied Physics Vol. 117 (11) AIP Publishing

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Estreicher, S. K., Gibbons, T. M., Kang, By., Bebek, M. B. (2014) Phonons and defects in semiconductors and nanostructures: Phonon trapping, phonon scattering, and heat flow at heterojunctions. Journal of Applied Physics, 115 (1). 12012pp. doi:10.1063/1.4838059
Gibbons, T. M., Bebek, M. B., Kang, By., Stanley, C. M., Estreicher, S. K. (2015) Phonon-phonon interactions: First principles theory. Journal of Applied Physics, 118 (8). 85103pp. doi:10.1063/1.4929452
Gibbons, T. M., Backlund, D. J., Estreicher, S. K. (2017) Cobalt-related defects in silicon. Journal of Applied Physics, 121 (4). 45704pp. doi:10.1063/1.4975034
Gibbons, T. M., Kang, By., Estreicher, S. K., Carbogno, C. (2011) Thermal conductivity of Si nanostructures containing defects: Methodology, isotope effects, and phonon trapping. Physical Review B, 84 (3) doi:10.1103/physrevb.84.035317
Bebek, M. B., Stanley, C. M., Gibbons, T. M., Estreicher, S. K. (2016) Temperature dependence of phonon-defect interactions: phonon scattering vs. phonon trapping. Scientific Reports, 6. doi:10.1038/srep32150
Sanati, M., Estreicher, S.K. (2003) First-principles thermodynamics of defects in semiconductors. Physica B: Condensed Matter, 340. 630-636 doi:10.1016/j.physb.2003.09.158
Gibbons, T. M., Estreicher, S. K., Potter, K., Bekisli, F., Stavola, M. (2013) Huge isotope effect on the vibrational lifetimes of an H2*(C) defect in Si. Physical Review B, 87 (11) doi:10.1103/physrevb.87.115207
Estreicher, S. K., Sanati, M., Gonzalez Szwacki, N. (2008) Iron in silicon: Interactions with radiation defects, carbon, and oxygen. Physical Review B, 77 (12) doi:10.1103/physrevb.77.125214
Backlund, D. J., Gibbons, T. M., Estreicher, S. K. (2016) Vanadium interactions in crystalline silicon. Physical Review B, 94 (19) doi:10.1103/physrevb.94.195210
Liedke, M. O., Anwand, W., Bali, R., Cornelius, S., Butterling, M., Trinh, T. T., Wagner, A., Salamon, S., Walecki, D., Smekhova, A., Wende, H., Potzger, K. (2015) Open volume defects and magnetic phase transition in Fe60Al40 transition metal aluminide. Journal of Applied Physics, 117 (16). 163908pp. doi:10.1063/1.4919014
Gibbons, T. M., Estreicher, S. K. (2009) Impact of Impurities on the Thermal Conductivity of Semiconductor Nanostructures: First-Principles Theory. Physical Review Letters, 102 (25). doi:10.1103/physrevlett.102.255502
 
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