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Iwata, Yoshiya, Oto, Takao, Gachet, David, Banal, Ryan G., Funato, Mitsuru, Kawakami, Yoichi (2015) Co-existence of a few and sub micron inhomogeneities in Al-rich AlGaN/AlN quantum wells. Journal of Applied Physics, 117 (11). 115702pp. doi:10.1063/1.4915533

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Reference TypeJournal (article/letter/editorial)
TitleCo-existence of a few and sub micron inhomogeneities in Al-rich AlGaN/AlN quantum wells
JournalJournal of Applied Physics
AuthorsIwata, YoshiyaAuthor
Oto, TakaoAuthor
Gachet, DavidAuthor
Banal, Ryan G.Author
Funato, MitsuruAuthor
Kawakami, YoichiAuthor
Year2015 (March 21)Volume117
Issue11
PublisherAIP Publishing
DOIdoi:10.1063/1.4915533Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5200667Long-form Identifiermindat:1:5:5200667:2
GUID0
Full ReferenceIwata, Yoshiya, Oto, Takao, Gachet, David, Banal, Ryan G., Funato, Mitsuru, Kawakami, Yoichi (2015) Co-existence of a few and sub micron inhomogeneities in Al-rich AlGaN/AlN quantum wells. Journal of Applied Physics, 117 (11). 115702pp. doi:10.1063/1.4915533
Plain TextIwata, Yoshiya, Oto, Takao, Gachet, David, Banal, Ryan G., Funato, Mitsuru, Kawakami, Yoichi (2015) Co-existence of a few and sub micron inhomogeneities in Al-rich AlGaN/AlN quantum wells. Journal of Applied Physics, 117 (11). 115702pp. doi:10.1063/1.4915533
In(2015, March) Journal of Applied Physics Vol. 117 (11) AIP Publishing

See Also

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Oto, Takao, Banal, Ryan G., Funato, Mitsuru, Kawakami, Yoichi (2014) Optical gain characteristics in Al-rich AlGaN/AlN quantum wells. Applied Physics Letters, 104 (18). 181102pp. doi:10.1063/1.4875592
Iwata, Yoshiya, Banal, Ryan G., Ichikawa, Shuhei, Funato, Mitsuru, Kawakami, Yoichi (2015) Emission mechanisms in Al-rich AlGaN/AlN quantum wells assessed by excitation power dependent photoluminescence spectroscopy. Journal of Applied Physics, 117 (7). 75701pp. doi:10.1063/1.4908282
Iwata, Yoshiya, Oto, Takao, Kaneta, Akio, Banal, Ryan G., Funato, Mitsuru, Kawakami, Yoichi (2011) Time-resolved photoluminescence of Al-rich AlGaN/AlN quantum wells under selective excitation. physica status solidi (c), 8 (7). 2191-2193 doi:10.1002/pssc.201001083
Oto, Takao, Banal, Ryan G., Funato, Mitsuru, Kawakami, Yoichi (2010) Deep ultraviolet emission mechanisms in highly excited Al0.79Ga0.21N/AlN quantum wells. physica status solidi (c), 7 (7). 1909-1912 doi:10.1002/pssc.200983607
Banal, Ryan G., Funato, Mitsuru, Kawakami, Yoichi (2011) Extremely high internal quantum efficiencies from AlGaN/AlN quantum wells emitting in the deep ultraviolet spectral region. Applied Physics Letters, 99 (1). 11902pp. doi:10.1063/1.3607306
Banal, Ryan G., Funato, Mitsuru, Kawakami, Yoichi (2010) Characteristics of high Al-content AlGaN/AlN quantum wells fabricated by modified migration enhanced epitaxy. physica status solidi (c), 7 (7). 2111-2114 doi:10.1002/pssc.200983609
Funato, Mitsuru, Matsuda, Kazuhisa, Banal, Ryan G., Ishii, Ryota, Kawakami, Yoichi (2013) Strong optical polarization in nonpolar(11¯00)AlxGa1−xN/AlN quantum wells. Physical Review B, 87 (4) doi:10.1103/physrevb.87.041306
Hayashi, Yuki, Banal, Ryan G., Funato, Mitsuru, Kawakami, Yoichi (2013) Heteroepitaxy between wurtzite and corundum materials. Journal of Applied Physics, 113 (18). 183523pp. doi:10.1063/1.4804328
Banal, Ryan G., Funato, Mitsuru, Kawakami, Yoichi (2008) Initial nucleation of AlN grown directly on sapphire substrates by metal-organic vapor phase epitaxy. Applied Physics Letters, 92 (24). 241905pp. doi:10.1063/1.2937445
Banal, Ryan G., Funato, Mitsuru, Kawakami, Yoichi (2009) Surface diffusion during metalorganic vapor phase epitaxy of AlN. physica status solidi (c), 6 (2). 599-602 doi:10.1002/pssc.200880415
Banal, Ryan G., Funato, Mitsuru, Kawakami, Yoichi (2009) Growth characteristics of AlN on sapphire substrates by modified migration-enhanced epitaxy. Journal of Crystal Growth, 311 (10). 2834-2836 doi:10.1016/j.jcrysgro.2009.01.023
 
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