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Wallace, M. J., Edwards, P. R., Kappers, M. J., Hopkins, M. A., Oehler, F., Sivaraya, S., Oliver, R. A., Humphreys, C. J., Allsopp, D. W. E., Martin, R. W. (2015) Effect of the barrier growth mode on the luminescence and conductivity micron scale uniformity of InGaN light emitting diodes. Journal of Applied Physics, 117 (11). 115705pp. doi:10.1063/1.4915628

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Reference TypeJournal (article/letter/editorial)
TitleEffect of the barrier growth mode on the luminescence and conductivity micron scale uniformity of InGaN light emitting diodes
JournalJournal of Applied Physics
AuthorsWallace, M. J.Author
Edwards, P. R.Author
Kappers, M. J.Author
Hopkins, M. A.Author
Oehler, F.Author
Sivaraya, S.Author
Oliver, R. A.Author
Humphreys, C. J.Author
Allsopp, D. W. E.Author
Martin, R. W.Author
Year2015 (March 21)Volume117
Issue11
PublisherAIP Publishing
DOIdoi:10.1063/1.4915628Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5200669Long-form Identifiermindat:1:5:5200669:0
GUID0
Full ReferenceWallace, M. J., Edwards, P. R., Kappers, M. J., Hopkins, M. A., Oehler, F., Sivaraya, S., Oliver, R. A., Humphreys, C. J., Allsopp, D. W. E., Martin, R. W. (2015) Effect of the barrier growth mode on the luminescence and conductivity micron scale uniformity of InGaN light emitting diodes. Journal of Applied Physics, 117 (11). 115705pp. doi:10.1063/1.4915628
Plain TextWallace, M. J., Edwards, P. R., Kappers, M. J., Hopkins, M. A., Oehler, F., Sivaraya, S., Oliver, R. A., Humphreys, C. J., Allsopp, D. W. E., Martin, R. W. (2015) Effect of the barrier growth mode on the luminescence and conductivity micron scale uniformity of InGaN light emitting diodes. Journal of Applied Physics, 117 (11). 115705pp. doi:10.1063/1.4915628
In(2015, March) Journal of Applied Physics Vol. 117 (11) AIP Publishing

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