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Li, Chengguo, Liu, Hongfei, Chua, Soo Jin (2015) Influences of group-III source preflow on the polarity, optical, and structural properties of GaN grown on nitridated sapphire substrates by metal-organic chemical vapor deposition. Journal of Applied Physics, 117 (12). 125305pp. doi:10.1063/1.4916243

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Reference TypeJournal (article/letter/editorial)
TitleInfluences of group-III source preflow on the polarity, optical, and structural properties of GaN grown on nitridated sapphire substrates by metal-organic chemical vapor deposition
JournalJournal of Applied Physics
AuthorsLi, ChengguoAuthor
Liu, HongfeiAuthor
Chua, Soo JinAuthor
Year2015 (March 28)Volume117
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.4916243Search in ResearchGate
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Mindat Ref. ID5200721Long-form Identifiermindat:1:5:5200721:9
GUID0
Full ReferenceLi, Chengguo, Liu, Hongfei, Chua, Soo Jin (2015) Influences of group-III source preflow on the polarity, optical, and structural properties of GaN grown on nitridated sapphire substrates by metal-organic chemical vapor deposition. Journal of Applied Physics, 117 (12). 125305pp. doi:10.1063/1.4916243
Plain TextLi, Chengguo, Liu, Hongfei, Chua, Soo Jin (2015) Influences of group-III source preflow on the polarity, optical, and structural properties of GaN grown on nitridated sapphire substrates by metal-organic chemical vapor deposition. Journal of Applied Physics, 117 (12). 125305pp. doi:10.1063/1.4916243
In(2015, March) Journal of Applied Physics Vol. 117 (12) AIP Publishing

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Zhang, Xiong, Chua, Soo-Jin, Liu, Wei, Chong, Kok-Boon (1998) Photoreflectance study of Si-doped GaN grown by metal–organic chemical vapor deposition. Applied Physics Letters, 72 (15). 1890-1892 doi:10.1063/1.121217
Raghavan, Srinivasan, Redwing, Joan M. (2004) Intrinsic stresses in AlN layers grown by metal organic chemical vapor deposition on (0001) sapphire and (111) Si substrates. Journal of Applied Physics, 96 (5). 2995-3003 doi:10.1063/1.1777812
Perumal, Premchander, Ganaprakasam, Sonia, Krishnan, Baskar (2004) Optical Properties of High Energy Tin (Sn5+) Ion Irradiated Metal-Organic Chemical Vapor Deposition Grown GaN on Sapphire. Japanese Journal of Applied Physics, 43 (7) 4150-4152 doi:10.1143/jjap.43.4150
Uesugi, Tsutomu, Kachi, Tetsu (2011) Electrical Characterization of GaN p–n Junctions Grown on Freestanding GaN Substrates by Metal–Organic Chemical Vapor Deposition. Japanese Journal of Applied Physics, 50. 31005 doi:10.1143/jjap.50.031005
Alloing, B., Vézian, S., Tottereau, O., Vennéguès, P., Beraudo, E., Zuniga-Pérez, J. (2011) On the polarity of GaN micro- and nanowires epitaxially grown on sapphire (0001) and Si(111) substrates by metal organic vapor phase epitaxy and ammonia-molecular beam epitaxy. Applied Physics Letters, 98 (1). 11914pp. doi:10.1063/1.3525170
Sato, Hisao, Sugahara, Tomoya, Naoi, Yoshiki, Sakai, Shiro (1998) Compositional Inhomogeneity of InGaN Grown on Sapphire and Bulk GaN Substrates by Metalorganic Chemical Vapor Deposition. Japanese Journal of Applied Physics, 37. 2013-2015 doi:10.1143/jjap.37.2013
Bayram, C., Péré-laperne, N., Razeghi, M. (2009) Effects of well width and growth temperature on optical and structural characteristics of AlN/GaN superlattices grown by metal-organic chemical vapor deposition. Applied Physics Letters, 95 (20). 201906pp. doi:10.1063/1.3267101
Uesugi, Tsutomu, Kachi, Tetsu (2011) Electrical Characterization of GaN p–n Junctions Grown on Freestanding GaN Substrates by Metal–Organic Chemical Vapor Deposition. Japanese Journal of Applied Physics, 50 (3) 31005 doi:10.7567/jjap.50.031005
Nakada, Naoyuki, Mori, Masayoshi, Ishikawa, Hiroyasu, Egawa, Takashi, Jimbo, Takashi (2003) Correlation between Electrical and Surface Properties of n-GaN on Sapphire Grown by Metal-Organic Chemical Vapor Deposition. Japanese Journal of Applied Physics, 42. 2573-2577 doi:10.1143/jjap.42.2573
Someya, T., Hoshino, K., Arakawa, Y. (2001) Misorientation-angle dependence of GaN layers grown on a-plane sapphire substrates by metalorganic chemical vapor deposition. Applied Physics Letters, 79 (13). 1992-1994 doi:10.1063/1.1402636
Alyamani, A., Sanvitto, D., Khalifa, A. A., Skolnick, M. S., Wang, T., Ranalli, F., Parbrook, P. J., Tahraoui, A., Airey, R. (2007) GaN hybrid microcavities in the strong coupling regime grown by metal-organic chemical vapor deposition on sapphire substrates. Journal of Applied Physics, 101 (9). 93110pp. doi:10.1063/1.2728744
 
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