Mehonic, Adnan, Buckwell, Mark, Montesi, Luca, Garnett, Leon, Hudziak, Stephen, Fearn, Sarah, Chater, Richard, McPhail, David, Kenyon, Anthony J. (2015) Structural changes and conductance thresholds in metal-free intrinsic SiOx resistive random access memory. Journal of Applied Physics, 117 (12). 124505pp. doi:10.1063/1.4916259
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Structural changes and conductance thresholds in metal-free intrinsic SiOx resistive random access memory | ||
Journal | Journal of Applied Physics | ||
Authors | Mehonic, Adnan | Author | |
Buckwell, Mark | Author | ||
Montesi, Luca | Author | ||
Garnett, Leon | Author | ||
Hudziak, Stephen | Author | ||
Fearn, Sarah | Author | ||
Chater, Richard | Author | ||
McPhail, David | Author | ||
Kenyon, Anthony J. | Author | ||
Year | 2015 (March 28) | Volume | 117 |
Issue | 12 | ||
Publisher | AIP Publishing | ||
DOI | doi:10.1063/1.4916259Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 5200731 | Long-form Identifier | mindat:1:5:5200731:6 |
GUID | 0 | ||
Full Reference | Mehonic, Adnan, Buckwell, Mark, Montesi, Luca, Garnett, Leon, Hudziak, Stephen, Fearn, Sarah, Chater, Richard, McPhail, David, Kenyon, Anthony J. (2015) Structural changes and conductance thresholds in metal-free intrinsic SiOx resistive random access memory. Journal of Applied Physics, 117 (12). 124505pp. doi:10.1063/1.4916259 | ||
Plain Text | Mehonic, Adnan, Buckwell, Mark, Montesi, Luca, Garnett, Leon, Hudziak, Stephen, Fearn, Sarah, Chater, Richard, McPhail, David, Kenyon, Anthony J. (2015) Structural changes and conductance thresholds in metal-free intrinsic SiOx resistive random access memory. Journal of Applied Physics, 117 (12). 124505pp. doi:10.1063/1.4916259 | ||
In | (2015, March) Journal of Applied Physics Vol. 117 (12) AIP Publishing |
See Also
These are possibly similar items as determined by title/reference text matching only.