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Armstrong, Andrew M., Bryant, Benjamin N., Crawford, Mary H., Koleske, Daniel D., Lee, Stephen R., Wierer, Jonathan J. (2015) Defect-reduction mechanism for improving radiative efficiency in InGaN/GaN light-emitting diodes using InGaN underlayers. Journal of Applied Physics, 117 (13). 134501pp. doi:10.1063/1.4916727

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Reference TypeJournal (article/letter/editorial)
TitleDefect-reduction mechanism for improving radiative efficiency in InGaN/GaN light-emitting diodes using InGaN underlayers
JournalJournal of Applied Physics
AuthorsArmstrong, Andrew M.Author
Bryant, Benjamin N.Author
Crawford, Mary H.Author
Koleske, Daniel D.Author
Lee, Stephen R.Author
Wierer, Jonathan J.Author
Year2015 (April 7)Volume117
Issue13
PublisherAIP Publishing
DOIdoi:10.1063/1.4916727Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5200788Long-form Identifiermindat:1:5:5200788:4
GUID0
Full ReferenceArmstrong, Andrew M., Bryant, Benjamin N., Crawford, Mary H., Koleske, Daniel D., Lee, Stephen R., Wierer, Jonathan J. (2015) Defect-reduction mechanism for improving radiative efficiency in InGaN/GaN light-emitting diodes using InGaN underlayers. Journal of Applied Physics, 117 (13). 134501pp. doi:10.1063/1.4916727
Plain TextArmstrong, Andrew M., Bryant, Benjamin N., Crawford, Mary H., Koleske, Daniel D., Lee, Stephen R., Wierer, Jonathan J. (2015) Defect-reduction mechanism for improving radiative efficiency in InGaN/GaN light-emitting diodes using InGaN underlayers. Journal of Applied Physics, 117 (13). 134501pp. doi:10.1063/1.4916727
In(2015, April) Journal of Applied Physics Vol. 117 (13) AIP Publishing

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Armstrong, A., Henry, T. A., Koleske, D. D., Crawford, M. H., Westlake, K. R., Lee, S. R. (2012) Dependence of radiative efficiency and deep level defect incorporation on threading dislocation density for InGaN/GaN light emitting diodes. Applied Physics Letters, 101 (16). 162102pp. doi:10.1063/1.4759003
Moseley, Michael W., Allerman, Andrew A., Crawford, Mary H., Wierer, Jonathan J., Smith, Michael L., Armstrong, Andrew M. (2015) Detection and modeling of leakage current in AlGaN-based deep ultraviolet light-emitting diodes. Journal of Applied Physics, 117 (9). 95301pp. doi:10.1063/1.4908543
Armstrong, Andrew M., Moseley, Michael W., Allerman, Andrew A., Crawford, Mary H., Wierer, Jonathan J. (2015) Growth temperature dependence of Si doping efficiency and compensating deep level defect incorporation in Al0.7Ga0.3N. Journal of Applied Physics, 117 (18). 185704pp. doi:10.1063/1.4920926
Schubert, Martin F., Chhajed, Sameer, Kim, Jong Kyu, Schubert, E. Fred, Koleske, Daniel D., Crawford, Mary H., Lee, Stephen R., Fischer, Arthur J., Thaler, Gerald, Banas, Michael A. (2007) Effect of dislocation density on efficiency droop in GaInN∕GaN light-emitting diodes. Applied Physics Letters, 91 (23). 231114pp. doi:10.1063/1.2822442
Yang, Yujue, Zeng, Yiping (2015) Alternating InGaN barriers with GaN barriers for enhancing optical performance in InGaN light-emitting diodes. Journal of Applied Physics, 117 (3). 35705pp. doi:10.1063/1.4906218
Gardner, N. F., Kim, J. C., Wierer, J. J., Shen, Y. C., Krames, M. R. (2005) Polarization anisotropy in the electroluminescence of m-plane InGaN–GaN multiple-quantum-well light-emitting diodes. Applied Physics Letters, 86 (11). 111101pp. doi:10.1063/1.1875765
Dai, Qi, Shan, Qifeng, Wang, Jing, Chhajed, Sameer, Cho, Jaehee, Schubert, E. Fred, Crawford, Mary H., Koleske, Daniel D., Kim, Min-Ho, Park, Yongjo (2010) Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes. Applied Physics Letters, 97 (13). 133507pp. doi:10.1063/1.3493654
Wierer, J. J., Koleske, D. D., Lee, S. R. (2012) Influence of barrier thickness on the performance of InGaN/GaN multiple quantum well solar cells. Applied Physics Letters, 100 (11). 111119pp. doi:10.1063/1.3695170
Moslehi Milani, N., Mohadesi, V., Asgari, A. (2015) A novel theoretical model for broadband blue InGaN/GaN superluminescent light emitting diodes. Journal of Applied Physics, 117 (5). 54502pp. doi:10.1063/1.4907207
(2015) A new interpretation for performance improvement of high-efficiency vertical blue light-emitting diodes by InGaN/GaN superlattices. Journal of Applied Physics, 118 (19). 193102pp. doi:10.1063/1.4935945
Moseley, Michael W., Allerman, Andrew A., Crawford, Mary H., Wierer, Jonathan J., Smith, Michael L., Biedermann, Laura B. (2015) Defect-enabled electrical current leakage in ultraviolet light-emitting diodes. physica status solidi (a), 212 (4). 723-726 doi:10.1002/pssa.201400182
 
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