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Nishiwaki, M., Ueda, K., Asano, H. (2015) Low temperature growth of Co2MnSi films on diamond semiconductors by ion-beam assisted sputtering. Journal of Applied Physics, 117 (17). 17pp. doi:10.1063/1.4917466

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Reference TypeJournal (article/letter/editorial)
TitleLow temperature growth of Co2MnSi films on diamond semiconductors by ion-beam assisted sputtering
JournalJournal of Applied Physics
AuthorsNishiwaki, M.Author
Ueda, K.Author
Asano, H.Author
Year2015 (May 7)Volume117
Issue17
PublisherAIP Publishing
DOIdoi:10.1063/1.4917466Search in ResearchGate
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Mindat Ref. ID5201426Long-form Identifiermindat:1:5:5201426:4
GUID0
Full ReferenceNishiwaki, M., Ueda, K., Asano, H. (2015) Low temperature growth of Co2MnSi films on diamond semiconductors by ion-beam assisted sputtering. Journal of Applied Physics, 117 (17). 17pp. doi:10.1063/1.4917466
Plain TextNishiwaki, M., Ueda, K., Asano, H. (2015) Low temperature growth of Co2MnSi films on diamond semiconductors by ion-beam assisted sputtering. Journal of Applied Physics, 117 (17). 17pp. doi:10.1063/1.4917466
In(2015, May) Journal of Applied Physics Vol. 117 (17) AIP Publishing

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