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Sporea, R. A., Overy, M., Shannon, J. M., Silva, S. R. P. (2015) Temperature dependence of the current in Schottky-barrier source-gated transistors. Journal of Applied Physics, 117 (18). 184502pp. doi:10.1063/1.4921114

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Reference TypeJournal (article/letter/editorial)
TitleTemperature dependence of the current in Schottky-barrier source-gated transistors
JournalJournal of Applied Physics
AuthorsSporea, R. A.Author
Overy, M.Author
Shannon, J. M.Author
Silva, S. R. P.Author
Year2015 (May 14)Volume117
Issue18
PublisherAIP Publishing
DOIdoi:10.1063/1.4921114Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5201670Long-form Identifiermindat:1:5:5201670:3
GUID0
Full ReferenceSporea, R. A., Overy, M., Shannon, J. M., Silva, S. R. P. (2015) Temperature dependence of the current in Schottky-barrier source-gated transistors. Journal of Applied Physics, 117 (18). 184502pp. doi:10.1063/1.4921114
Plain TextSporea, R. A., Overy, M., Shannon, J. M., Silva, S. R. P. (2015) Temperature dependence of the current in Schottky-barrier source-gated transistors. Journal of Applied Physics, 117 (18). 184502pp. doi:10.1063/1.4921114
In(2015, May) Journal of Applied Physics Vol. 117 (18) AIP Publishing

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Sporea, R. A., Trainor, M. J., Young, N. D., Shannon, J. M., Silva, S. R. P. (2015) Source-gated transistors for order-of-magnitude performance improvements in thin-film digital circuits. Scientific Reports, 4. doi:10.1038/srep04295
Sporea, R. A., Burridge, T., Silva, S. R. P. (2015) Self-Heating Effects In Polysilicon Source Gated Transistors. Scientific Reports, 5. doi:10.1038/srep14058
Balon, F., Shannon, J. M., Sealy, B. J. (2005) Modeling of high-current source-gated transistors in amorphous silicon. Applied Physics Letters, 86 (7). 73503pp. doi:10.1063/1.1865348
Bestelink, E., Landers, T., Sporea, R. A. (2019) Turn-off mechanisms in thin-film source-gated transistors with applications to power devices and rectification. Applied Physics Letters, 114 (18). 182103pp. doi:10.1063/1.5088681
Revva, P., Langer, J. M., Missous, M., Peaker, A. R. (1993) Temperature dependence of the Schottky barrier in Al/AlGaAs metal‐semiconductor junctions. Journal of Applied Physics, 74 (1). 416-425 doi:10.1063/1.354126
Calvet, L. E., Luebben, H., Reed, M. A., Wang, C., Snyder, J. P., Tucker, J. R. (2002) Suppression of leakage current in Schottky barrier metal–oxide–semiconductor field-effect transistors. Journal of Applied Physics, 91 (2). 757-759 doi:10.1063/1.1425074
Jiang, C., Rumyantsev, S. L., Samnakay, R., Shur, M. S., Balandin, A. A. (2015) High-temperature performance of MoS2 thin-film transistors: Direct current and pulse current-voltage characteristics. Journal of Applied Physics, 117 (6). 64301pp. doi:10.1063/1.4906496
Ma, Alex M., Gupta, Manisha, Afshar, Amir, Shoute, Gem, Tsui, Ying Y., Cadien, Kenneth C., Barlage, Douglas W. (2013) Schottky barrier source-gated ZnO thin film transistors by low temperature atomic layer deposition. Applied Physics Letters, 103 (25). 253503pp. doi:10.1063/1.4836955
Ashok, S., Borrego, J. M., Gutmann, R. J. (1980) Current transport in GaAs Schottky barrier diodes subject to high neutron fluence. Journal of Applied Physics, 51 (2). 1076-1084 doi:10.1063/1.327715
Clarke, R. A., Green, M. A., Shewchun, J. (1974) Contact area dependence of minority‐carrier injection in Schottky barrier diodes. Journal of Applied Physics, 45 (3). 1442-1443 doi:10.1063/1.1663426
Gansen, E. J., Rowe, M. A., Harrington, S. D., Nehls, J. M., Etzel, S. M., Nam, S. W., Mirin, R. P. (2013) Temperature dependence of the single-photon sensitivity of a quantum dot, optically gated, field-effect transistor. Journal of Applied Physics, 114 (9). 93103pp. doi:10.1063/1.4820474
 
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