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Kiran, M. S. R. N., Tran, T. T., Smillie, L. A., Haberl, B., Subianto, D., Williams, J. S., Bradby, J. E. (2015) Temperature-dependent mechanical deformation of silicon at the nanoscale: Phase transformation versus defect propagation. Journal of Applied Physics, 117 (20). 205901pp. doi:10.1063/1.4921534

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Reference TypeJournal (article/letter/editorial)
TitleTemperature-dependent mechanical deformation of silicon at the nanoscale: Phase transformation versus defect propagation
JournalJournal of Applied Physics
AuthorsKiran, M. S. R. N.Author
Tran, T. T.Author
Smillie, L. A.Author
Haberl, B.Author
Subianto, D.Author
Williams, J. S.Author
Bradby, J. E.Author
Year2015 (May 28)Volume117
Issue20
PublisherAIP Publishing
DOIdoi:10.1063/1.4921534Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5201811Long-form Identifiermindat:1:5:5201811:8
GUID0
Full ReferenceKiran, M. S. R. N., Tran, T. T., Smillie, L. A., Haberl, B., Subianto, D., Williams, J. S., Bradby, J. E. (2015) Temperature-dependent mechanical deformation of silicon at the nanoscale: Phase transformation versus defect propagation. Journal of Applied Physics, 117 (20). 205901pp. doi:10.1063/1.4921534
Plain TextKiran, M. S. R. N., Tran, T. T., Smillie, L. A., Haberl, B., Subianto, D., Williams, J. S., Bradby, J. E. (2015) Temperature-dependent mechanical deformation of silicon at the nanoscale: Phase transformation versus defect propagation. Journal of Applied Physics, 117 (20). 205901pp. doi:10.1063/1.4921534
In(2015, May) Journal of Applied Physics Vol. 117 (20) AIP Publishing

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Kiran, M. S. R. N., Haberl, B., Williams, J. S., Bradby, J. E. (2014) Temperature dependent deformation mechanisms in pure amorphous silicon. Journal of Applied Physics, 115 (11). 113511pp. doi:10.1063/1.4869136
Wong, S., Haberl, B., Williams, J. S., Bradby, J. E. (2015) Phase transformation as the single-mode mechanical deformation of silicon. Applied Physics Letters, 106 (25). 252103pp. doi:10.1063/1.4923205
Huston, L. Q., Kiran, M. S. R. N., Smillie, L. A., Williams, J. S., Bradby, J. E. (2017) Cold nanoindentation of germanium. Applied Physics Letters, 111 (2). 21901pp. doi:10.1063/1.4993163
Wong, S., Haberl, B., Williams, J. S., Bradby, J. E. (2015) The influence of hold time on the onset of plastic deformation in silicon. Journal of Applied Physics, 118 (24). 245904pp. doi:10.1063/1.4938480
Verburg, P. C., Smillie, L. A., Römer, G. R. B. E., Haberl, B., Bradby, J. E., Williams, J. S., Huis in ’t Veld, A. J. (2015) Crystal structure of laser-induced subsurface modifications in Si. Applied Physics A, 120. 683-691 doi:10.1007/s00339-015-9238-5
Fujisawa, N., Ruffell, S., Bradby, J. E., Williams, J. S., Haberl, B., Warren, O. L. (2009) Understanding pressure-induced phase-transformation behavior in silicon through in situ electrical probing under cyclic loading conditions. Journal of Applied Physics, 105 (10). 106111pp. doi:10.1063/1.3130154
Haberl, B., Bradby, J. E., Swain, M. V., Williams, J. S., Munroe, P. (2004) Phase transformations induced in relaxed amorphous silicon by indentation at room temperature. Applied Physics Letters, 85 (23). 5559-5561 doi:10.1063/1.1832757
Deshmukh, S., Haberl, B., Ruffell, S., Munroe, P., Williams, J. S., Bradby, J. E. (2014) Phase transformation pathways in amorphous germanium under indentation pressure. Journal of Applied Physics, 115 (15). 153502pp. doi:10.1063/1.4871190
Haberl, B., Bogle, S. N., Li, T., McKerracher, I., Ruffell, S., Munroe, P., Williams, J. S., Abelson, J. R., Bradby, J. E. (2011) Unexpected short- and medium-range atomic structure of sputtered amorphous silicon upon thermal annealing. Journal of Applied Physics, 110 (9). 96104pp. doi:10.1063/1.3658628
Haberl, B., Bradby, J. E., Ruffell, S., Williams, J. S., Munroe, P. (2006) Phase transformations induced by spherical indentation in ion-implanted amorphous silicon. Journal of Applied Physics, 100 (1). 13520pp. doi:10.1063/1.2210767
Ruffell, S., Vedi, J., Bradby, J. E., Williams, J. S., Haberl, B. (2009) Effect of oxygen concentration on nanoindentation-induced phase transformations in ion-implanted amorphous silicon. Journal of Applied Physics, 105 (8). 83520pp. doi:10.1063/1.3097752
 
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