Pooth, Alexander, Uren, Michael J., Cäsar, Markus, Martin, Trevor, Kuball, Martin (2015) Charge movement in a GaN-based hetero-structure field effect transistor structure with carbon doped buffer under applied substrate bias. Journal of Applied Physics, 118 (21). 215701pp. doi:10.1063/1.4936780
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Charge movement in a GaN-based hetero-structure field effect transistor structure with carbon doped buffer under applied substrate bias | ||
| Journal | Journal of Applied Physics | ||
| Authors | Pooth, Alexander | Author | |
| Uren, Michael J. | Author | ||
| Cäsar, Markus | Author | ||
| Martin, Trevor | Author | ||
| Kuball, Martin | Author | ||
| Year | 2015 (December 7) | Volume | 118 |
| Issue | 21 | ||
| Publisher | AIP Publishing | ||
| DOI | doi:10.1063/1.4936780Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 5203225 | Long-form Identifier | mindat:1:5:5203225:1 |
| GUID | 0 | ||
| Full Reference | Pooth, Alexander, Uren, Michael J., Cäsar, Markus, Martin, Trevor, Kuball, Martin (2015) Charge movement in a GaN-based hetero-structure field effect transistor structure with carbon doped buffer under applied substrate bias. Journal of Applied Physics, 118 (21). 215701pp. doi:10.1063/1.4936780 | ||
| Plain Text | Pooth, Alexander, Uren, Michael J., Cäsar, Markus, Martin, Trevor, Kuball, Martin (2015) Charge movement in a GaN-based hetero-structure field effect transistor structure with carbon doped buffer under applied substrate bias. Journal of Applied Physics, 118 (21). 215701pp. doi:10.1063/1.4936780 | ||
| In | (2015, December) Journal of Applied Physics Vol. 118 (21) AIP Publishing | ||
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