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Stübner, R., Kolkovsky, Vl., Weber, J. (2015) Two different carbon-hydrogen complexes in silicon with closely spaced energy levels. Journal of Applied Physics, 118 (5). 55704pp. doi:10.1063/1.4928146

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Reference TypeJournal (article/letter/editorial)
TitleTwo different carbon-hydrogen complexes in silicon with closely spaced energy levels
JournalJournal of Applied Physics
AuthorsStübner, R.Author
Kolkovsky, Vl.Author
Weber, J.Author
Year2015 (August 7)Volume118
Issue5
PublisherAIP Publishing
DOIdoi:10.1063/1.4928146Search in ResearchGate
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Mindat Ref. ID5203604Long-form Identifiermindat:1:5:5203604:4
GUID0
Full ReferenceStübner, R., Kolkovsky, Vl., Weber, J. (2015) Two different carbon-hydrogen complexes in silicon with closely spaced energy levels. Journal of Applied Physics, 118 (5). 55704pp. doi:10.1063/1.4928146
Plain TextStübner, R., Kolkovsky, Vl., Weber, J. (2015) Two different carbon-hydrogen complexes in silicon with closely spaced energy levels. Journal of Applied Physics, 118 (5). 55704pp. doi:10.1063/1.4928146
In(2015, August) Journal of Applied Physics Vol. 118 (5) AIP Publishing

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Stübner, R., Scheffler, L., Kolkovsky, Vl., Weber, J. (2016) Single and double acceptor-levels of a carbon-hydrogen defect in n-type silicon. Journal of Applied Physics, 119 (20). 205709pp. doi:10.1063/1.4952702
Gwozdz, K., Stübner, R., Kolkovsky, Vl., Weber, J. (2017) Carbon-hydrogen defects with a neighboring oxygen atom in n-type Si. Applied Physics Letters, 111 (3). 32102pp. doi:10.1063/1.4993934
Scheffler, L., Kolkovsky, Vl., Weber, J. (2015) Identification of titanium-hydrogen complexes with up to four hydrogen atoms in silicon. Journal of Applied Physics, 117 (8). 85707pp. doi:10.1063/1.4913524
Kolkovsky, Vl., Stübner, R., Gwozdz, K., Weber, J. (2018) Carbon-hydrogen-related complexes in Si. Physica B: Condensed Matter, 535. 128-131 doi:10.1016/j.physb.2017.06.085
Scheffler, L., Kolkovsky, Vl., Weber, J. (2014) Electrical levels in nickel doped silicon. Journal of Applied Physics, 116 (17). 173704pp. doi:10.1063/1.4901003
Scheffler, L., Kolkovsky, Vl., Weber, J. (2013) Isolated substitutional cobalt and Co-related complexes in silicon. Journal of Applied Physics, 113 (18). 183714pp. doi:10.1063/1.4804321
Stübner, R., Kolkovsky, Vl., Weber, J., Abrosimov, N. V., Stanley, C. M., Backlund, D. J., Estreicher, S. K. (2020) Identification of the donor and acceptor states of the bond-centered hydrogen–carbon pair in Si and diluted SiGe alloys. Journal of Applied Physics, 127 (4). 45701pp. doi:10.1063/1.5135757
Gwozdz, K., Kolkovsky, Vl., Kolkovsky, V., Weber, J. (2018) Revised identification of the G-levels in gold doped Si by Laplace deep level transient spectroscopy. Journal of Applied Physics, 124 (1). 15701pp. doi:10.1063/1.5036807
Stübner, Ronald, Kolkovsky, Vladimir, Scheffler, Leopold, Weber, Joerg (2016) Identification of carbon-hydrogen complexes in n- and p-type silicon. physica status solidi (c), 13 (10). 770-775 doi:10.1002/pssc.201600046
Stübner, R., Kolkovsky, Vl., Leibiger, Gunnar, Habel, Frank, Weber, J. (2014) Preparation of Ag Schottky contacts on n-type GaN bulk crystals grown in nitrogen rich atmosphere by the hydride vapor phase epitaxy technique. Journal of Applied Physics, 116 (14). 143701pp. doi:10.1063/1.4897538
Kolkovsky, Vl., Scheffler, L., Weber, J. (2014) Transition metals (Ti and Co) in silicon and their complexes with hydrogen: A Laplace DLTS study. Physica B: Condensed Matter, 439. 24-28 doi:10.1016/j.physb.2013.11.005
 
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