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Dawson, P., Schulz, S., Oliver, R. A., Kappers, M. J., Humphreys, C. J. (2016) The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells. Journal of Applied Physics, 119 (18). 181505pp. doi:10.1063/1.4948237

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Reference TypeJournal (article/letter/editorial)
TitleThe nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells
JournalJournal of Applied Physics
AuthorsDawson, P.Author
Schulz, S.Author
Oliver, R. A.Author
Kappers, M. J.Author
Humphreys, C. J.Author
Year2016 (May 14)Volume119
Issue18
PublisherAIP Publishing
DOIdoi:10.1063/1.4948237Search in ResearchGate
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Mindat Ref. ID5204295Long-form Identifiermindat:1:5:5204295:7
GUID0
Full ReferenceDawson, P., Schulz, S., Oliver, R. A., Kappers, M. J., Humphreys, C. J. (2016) The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells. Journal of Applied Physics, 119 (18). 181505pp. doi:10.1063/1.4948237
Plain TextDawson, P., Schulz, S., Oliver, R. A., Kappers, M. J., Humphreys, C. J. (2016) The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells. Journal of Applied Physics, 119 (18). 181505pp. doi:10.1063/1.4948237
In(2016, May) Journal of Applied Physics Vol. 119 (18) AIP Publishing

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Davies, M. J., Dawson, P., Hammersley, S., Zhu, T., Kappers, M. J., Humphreys, C. J., Oliver, R. A. (2016) Comparative studies of efficiency droop in polar and non-polar InGaN quantum wells. Applied Physics Letters, 108 (25). 252101pp. doi:10.1063/1.4954236
Badcock, T. J., Hao, R., Moram, M. A., Kappers, M. J., Dawson, P., Oliver, R. A., Humphreys, C. J. (2012) Recombination mechanisms in heteroepitaxial non-polar InGaN/GaN quantum wells. Journal of Applied Physics, 112 (1). 13534pp. doi:10.1063/1.4731730
Blenkhorn, W E, Schulz, S, Tanner, D S P, Oliver, R A, Kappers, M J, Humphreys, C J, Dawson, P (2018) Resonant photoluminescence studies of carrier localisation in c-plane InGaN/GaN quantum well structures. Journal of Physics: Condensed Matter, 30 (17). 175303pp. doi:10.1088/1361-648x/aab818
Badcock, T. J., Dawson, P., Davies, M. J., Kappers, M. J., Massabuau, F. C.-P., Oehler, F., Oliver, R. A., Humphreys, C. J. (2014) Low temperature carrier redistribution dynamics in InGaN/GaN quantum wells. Journal of Applied Physics, 115 (11). 113505pp. doi:10.1063/1.4868628
Christian, G. M., Schulz, S., Kappers, M. J., Humphreys, C. J., Oliver, R. A., Dawson, P. (2018) Recombination from polar InGaN/GaN quantum well structures at high excitation carrier densities. Physical Review B, 98 (15) doi:10.1103/physrevb.98.155301
Davies, M. J., Hammersley, S., Massabuau, F. C.-P., Dawson, P., Oliver, R. A., Kappers, M. J., Humphreys, C. J. (2016) A comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayers. Journal of Applied Physics, 119 (5). 55708pp. doi:10.1063/1.4941321
Kundys, D., Schulz, S., Oehler, F., Sutherland, D., Badcock, T. J., Dawson, P., Kappers, M. J., Oliver, R. A., Humphreys, C. J. (2014) Polarized photoluminescence excitation spectroscopy of a-plane InGaN/GaN multiple quantum wells grown on r-plane sapphire. Journal of Applied Physics, 115 (11). 113106pp. doi:10.1063/1.4868692
Schulz, S., Tanner, D. S. P., O'Reilly, E. P., Caro, M. A., Tang, F., Griffiths, J. T., Oehler, F., Kappers, M. J., Oliver, R. A., Humphreys, C. J., Sutherland, D., Davies, M. J., Dawson, P. (2016) Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m-plane InGaN/GaN quantum wells. Applied Physics Letters, 109 (22). 223102pp. doi:10.1063/1.4968591
Hammersley, S., Watson-Parris, D., Dawson, P., Godfrey, M. J., Badcock, T. J., Kappers, M. J., McAleese, C., Oliver, R. A., Humphreys, C. J. (2012) The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures. Journal of Applied Physics, 111 (8). 83512pp. doi:10.1063/1.3703062
Watson-Parris, D., Godfrey, M. J., Oliver, R. A., Dawson, P., Galtrey, M. J., Kappers, M. J., Humphreys, C. J. (2010) Energy landscape and carrier wave-functions in InGaN/GaN quantum wells. physica status solidi (c), 7 (7). 2255-2258 doi:10.1002/pssc.200983516
Davies, M. J., Badcock, T. J., Dawson, P., Kappers, M. J., Oliver, R. A., Humphreys, C. J. (2013) High excitation carrier density recombination dynamics of InGaN/GaN quantum well structures: Possible relevance to efficiency droop. Applied Physics Letters, 102 (2). 22106pp. doi:10.1063/1.4781398
 
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