Reference Type | Journal (article/letter/editorial) |
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Title | Schottky barrier heights at the interfaces between pure-phase InAs nanowires and metal contacts |
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Journal | Journal of Applied Physics |
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Authors | Feng, Boyong | Author |
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Huang, Shaoyun | Author |
Wang, Jiyin | Author |
Pan, Dong | Author |
Zhao, Jianghua | Author |
Xu, H. Q. | Author |
Year | 2016 (February 7) | Volume | 119 |
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Issue | 5 |
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Publisher | AIP Publishing |
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DOI | doi:10.1063/1.4941391Search in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 5204860 | Long-form Identifier | mindat:1:5:5204860:5 |
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GUID | 0 |
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Full Reference | Feng, Boyong, Huang, Shaoyun, Wang, Jiyin, Pan, Dong, Zhao, Jianghua, Xu, H. Q. (2016) Schottky barrier heights at the interfaces between pure-phase InAs nanowires and metal contacts. Journal of Applied Physics, 119 (5). 54304pp. doi:10.1063/1.4941391 |
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Plain Text | Feng, Boyong, Huang, Shaoyun, Wang, Jiyin, Pan, Dong, Zhao, Jianghua, Xu, H. Q. (2016) Schottky barrier heights at the interfaces between pure-phase InAs nanowires and metal contacts. Journal of Applied Physics, 119 (5). 54304pp. doi:10.1063/1.4941391 |
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In | (2016, February) Journal of Applied Physics Vol. 119 (5) AIP Publishing |
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